Datasheet > BDY90A

BDY90A

更新时间： 2024-09-30 08:52:07

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	82K
描述
isc Silicon NPN Power Transistor

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中文翻译

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数据手册

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BDY90A 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BDY90A

DESCRIPTION

·High Current Capability

·Collector-Emitter Sustaining Voltage-

: V_CEO(SUS)= 100V(Min)

·High Switching Speed

APPLICATIONS

·Designed for use in converters, inverters, switching

regulators and switching control amplifiers.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEX

V_CEO

V_EBO

I_C

PARAMETER

VALUE

120

100

UNIT

Collector-Base Voltage

Collector-Emitter Voltage(V_EB= 0)

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

I_CM

I_B

Base Current-Continuous

Base Current-Peak

I_BM

I_E

Emitter Current-Continuous

Emitter Current-Peak

-15

I_EM

P_C

Collector Power Dissipation@T_C=25℃

Junction Temperature

℃

T_J

150

-65~150

Storage Temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

2.0

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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