BDY91

更新时间： 2024-09-30 08:52:07

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管局域网
页数	文件大小	规格书
2页	81K
描述
isc Silicon NPN Power Transistor

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中文翻译

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技术参数
数据手册

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BDY91 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.54
Is Samacsys：	N	Base Number Matches：	1

BDY91 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BDY91

DESCRIPTION

·High DC Current Gain-

: h_FE= 30-120@I_C= 5A

·Excellent Safe Operating Area

·High Current Capability

APPLICATIONS

·Designed for use in switching-control amplifiers, power

gates,switching regulators, converters, and inverters.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEV

V_CEO

V_EBO

I_C

PARAMETER

VALUE

100

UNIT

Collector-Base Voltage

Collector-Emitter Voltage V_BE= -1.5V

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current-Continuous

Collector Current-Peak

I_CM

I_B

Base Current-Continuous

Collector Power Dissipation

@T_C≤25℃

P_C

℃

T_J

Junction Temperature

175

-65~175

Storage Temperature Range

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

2.5

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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