BDY27

更新时间： 2025-08-10 06:41:59

品牌	Logo	应用领域
无锡固电 - ISC		晶体晶体管
页数	文件大小	规格书
2页	204K
描述
Silicon NPN Power Transistor

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中文翻译

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数据手册

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BDY27 数据手册

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BDY27

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V_(BR)CEO= 200V(Min.)

·Collector-Emitter Saturation Voltage-

: V_CE(sat)= 0.6V(Max)@ I_C= 2A

·High Switching Speed

APPLICATIONS

·Designed for LF signal powe amplifier applications.

ABSOLUTE MAXIMUM RATINGS(T_a=25℃)

SYMBOL

V_CBO

V_CEO

V_EBO

I_C

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VALUE

400

200

UNIT

Collector Current-Continuous

Base Current

I_B

P_C

Collector Power Dissipation@T_C=25℃

Junction Temperature

87.5

200

-65~200

℃

T_J

Storage Temperature

T_stg

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Thermal Resistance,Junction to Case

2.0

℃/W

R_{th j-c}

isc Website：www.iscsemi.cn

中文翻译

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