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BD9E151ANUX PDF预览

BD9E151ANUX

更新时间: 2023-09-03 20:35:47
品牌 Logo 应用领域
罗姆 - ROHM 电池驱动脉冲电容器陶瓷电容器二极管转换器
页数 文件大小 规格书
25页 1610K
描述
BD9E151ANUX是内置对应28V高输入电压的功率MOSFET的二极管整流降压转换器。使用二极管整流,轻负载时脉冲可自动跳跃维持高效率。此外,关断时电源电流低至0μA,因此适用于电池驱动应用。可使用陶瓷电容器,并具有基于电流模式控制的高速负载响应和简便的外部设定相位补偿系统,可使用各种外接常数轻松制作小型电源。

BD9E151ANUX 数据手册

 浏览型号BD9E151ANUX的Datasheet PDF文件第2页浏览型号BD9E151ANUX的Datasheet PDF文件第3页浏览型号BD9E151ANUX的Datasheet PDF文件第4页浏览型号BD9E151ANUX的Datasheet PDF文件第5页浏览型号BD9E151ANUX的Datasheet PDF文件第6页浏览型号BD9E151ANUX的Datasheet PDF文件第7页 
Datasheet  
6 V to 28 V, 1.2 A 1ch  
Step-Down Switching Regulator  
Integrated Power MOSFET  
BD9E151ANUX  
General Description  
Key Specifications  
BD9E151ANUX is diode-rectification buck converter of  
high input voltage 28 V with integrated Power MOSFET.  
Because of diode-rectification, a pulse skips in light load  
automatically and it maintains high efficiency. In addition,  
it is available for battery powered application because  
supply current is small with 0 uA at shutdown. It can easily  
make a small power supply with the external parts of the  
wide range, because the use of ceramic capacitor is  
possible, and because it has high speed road response by  
current mode control and has the external setting phase  
compensation.  
Input Voltage Range:  
Reference Voltage Precision (Ta = 25 °C):1 V ± 1.0 %  
Max Output Current:  
Operating Temperature Range:  
6 V to 28 V  
1.2 A (Max)  
-40 °C to +85 °C  
Package  
VSON008X2030  
W (Typ) x D (Typ) x H (Max)  
2.0 mm x 3.0 mm x 0.6 mm  
Features  
Wide Input Range (VIN = 6 V to 28 V)  
30 V / 80 mΩ Integrated Power MOSFET  
600 kHz (Typ) High Frequency Operation  
Built in Reference Voltage (1.0 V ± 1.0 %)  
Built in Over Current Protection (OCP), Under Voltage  
Lockout (UVLO), Over Voltage Protection (OVP),  
Thermal Shutdown (TSD)  
Stand-by mode (IIN = 0 μA)  
VSON008X2030 Small Package  
Applications  
Surveillance Camera Applications  
Consumer 12 V, 24 V BUS-Line Systems  
OA Applications  
Typical Application Circuit  
CBST: 0.1 μF  
L: 15 μH  
1
2
3
4
8
7
6
5
BST  
VIN  
EN  
LX  
GND  
VC  
VOUT  
47 μF / 16 V  
Cout  
:
D1  
CVIN: 10 μF / 35 V  
VIN  
ON/OFF  
control  
R1: 12 kΩ  
C1: 10000 pF  
SS  
FB  
R3: 2.7 kΩ  
CSS:0.047 μF  
R2: 3 kΩ  
Product structure : Silicon integrated circuit This product has no designed protection against radioactive rays.  
www.rohm.com  
© 2020 ROHM Co., Ltd. All rights reserved.  
TSZ22111 • 14 • 001  
TSZ02201-0Q2Q0AJ00750-1-2  
1/22  
25.Mar.2020 Rev.001  

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