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BD909 PDF预览

BD909

更新时间: 2024-11-27 22:27:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
6页 100K
描述
COMPLEMENTARY SILICON POWER TRANSISTORS

BD909 数据手册

 浏览型号BD909的Datasheet PDF文件第2页浏览型号BD909的Datasheet PDF文件第3页浏览型号BD909的Datasheet PDF文件第4页浏览型号BD909的Datasheet PDF文件第5页浏览型号BD909的Datasheet PDF文件第6页 
BD909/911  
BD910/912  
COMPLEMENTARY SILICON POWER TRANSISTORS  
STMicroelectronics PREFERRED  
SALESTYPES  
DESCRIPTION  
The BD909 and BD911 are silicon Epitaxial-Base  
NPN power transistors mounted in Jedec TO-220  
plastic package. They are intented for use in  
power linear and switching applications.  
The complementary PNP types are BD910 and  
BD912 respectively.  
3
2
1
TO-220  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
NPN  
PNP  
BD909  
BD910  
80  
BD911  
BD912  
100  
VCBO  
VCEO  
VEBO  
IE,IC  
IB  
Collector-Base Voltage (IE = 0)  
Collector-Emitter Voltage (IB = 0)  
Emitter-Base Voltage (IC = 0)  
Collector Current  
V
V
80  
100  
5
V
15  
A
Base Current  
5
90  
A
o
Ptot  
Tstg  
Tj  
W
oC  
oC  
Total Dissipation at Tc 25 C  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
For PNP types voltage and current values are negative.  
1/6  
October 1999  

BD909 替代型号

型号 品牌 替代类型 描述 数据表
2N6488G ONSEMI

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