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BD909 PDF预览

BD909

更新时间: 2024-11-28 12:51:11
品牌 Logo 应用领域
COMSET 晶体晶体管
页数 文件大小 规格书
3页 103K
描述
SILICON POWER TRANSISTORS

BD909 数据手册

 浏览型号BD909的Datasheet PDF文件第2页浏览型号BD909的Datasheet PDF文件第3页 
BD909 – BD911  
SILICON POWER TRANSISTORS  
The BD909 and DB911, are silicon epitaxial-base NPN power transistors in a TO-220  
envelope. They are intended for use in power linear and switching applications.  
Compliance to RoHS.  
ABSOLUTE MAXIMUM RATINGS  
Symbol Ratings  
Value  
Unit  
BD909  
80  
BD911  
100  
VCBO  
VCEO  
VEBO  
IC  
Collector-Base Voltage  
IE = 0  
IB = 0  
IC = 0  
V
V
V
A
A
A
W
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
80  
100  
5
15  
15  
5
90  
150  
IE  
Emitter Current  
IB  
Base Current  
Pt  
Power Dissipation  
Tj  
Tstg  
Junction Temperature  
Storage Temperature range  
°C  
-65 to 150  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
THERMAL CHARACTERISTICS  
Symbol  
Ratings  
Value  
Unit  
RthJ-mb  
From junction to mounting base  
1.4  
°C/W  
25/09/2012  
COMSET SEMICONDUCTORS  
1 | 3  

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