Datasheet > BD909

BD909

更新时间： 2024-01-22 06:26:30

品牌	Logo	应用领域
COMSET		晶体晶体管
页数	文件大小	规格书
3页	103K
描述
SILICON POWER TRANSISTORS

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中文翻译

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数据手册

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BD909 数据手册

SEMICONDUCTORS

BD909 – BD911

SILICON POWER TRANSISTORS

The BD909 and DB911, are silicon epitaxial-base NPN power transistors in a TO-220

envelope. They are intended for use in power linear and switching applications.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol Ratings

Value

Unit

BD909

BD911

100

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

I_E= 0

I_B= 0

I_C= 0

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

100

150

I_E

Emitter Current

I_B

Base Current

P_t

Power Dissipation

T_j

T_stg

Junction Temperature

Storage Temperature range

°C

-65 to 150

Limiting values in accordance with the Absolute Maximum System (IEC 134)

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

R_thJ-mb

From junction to mounting base

1.4

°C/W

25/09/2012

COMSET SEMICONDUCTORS

1 | 3

12 3

中文翻译

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