Datasheet > BD6607KN_11

BD6607KN_11

更新时间： 2022-10-15 20:30:14

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
5页	134K
描述
Silicon Monolithic Integrated Circuit

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数据手册

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BD6607KN_11 数据手册

2/4

○Electrical characteristics

(Unless otherwise specified, Ta=25°C, VCC=2.4V, VM=1.2V, VG=6.8V)

Limit

Parameter

Symbol

Unit

Conditions

STALL=L(*1)

Min.

Typ.

Max.

Control circuit current at standby

Driver power supply current at standby

Pre-driver power supply current at standby

Power supply current of control circuit

at no signal

ICCST

IMST

IGST

μA

STALL=L(*1)

ICCN

IGN

ICC

100

160

μA

STALL=L(*1)

Power supply current of pre-driver

at no signal

STALL=L(*1)

Power supply current of control circuit

at operation

STALL=H,ST1=ST2=L(*2)

Power supply current of pre-driver

at operation

0.7

0.95

～Logic input～

VCC

x0.8

Logic H level input voltage

Logic L level input voltage

VIH

VIL

VCC

x0.2

Logic H level input current

IIH

IIL

μA

FI, RI, UI, VI, WI, PWM pins

Logic L level input current

-1

ST pin pull-down resistance

～BEMF voltage detection comparator～

Comparator input offset voltage

Comparator input current

RST

0.33

0.6

1.0

MΩ

applied to STALL, ST1,ST2 pins

VOS

ICP

-5

-1

μA

VCC

x0.8

Comparator H level output voltage

VOH

VOL

Isource=500μA

VCC

x0.2

Comparator L level output voltage

～Power MOS～

Isink=500A

upper and lower ON resistance

in total

H-bridge output ON resistance

RON1,2

0.7

1.30

1.55

Ω

upper and lower ON resistance

in total

Half-bridge output ON resistance

RONU,V,W

0.85

＊1 : Each input pin=L or H

＊2 : PWM1, PWM2 pins=176.4kHz, each H-bridge input pin= 88.2kHz, each 3-phase half-bridge input pin=100Hz

REV. C

123 4 5

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