Datasheet > BD660CT

BD660CT

更新时间： 2022-10-15 20:30:04

品牌	Logo	应用领域
强茂 - PANJIT		肖特基二极管
页数	文件大小	规格书
2页	42K
描述
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS

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数据手册

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BD660CT 数据手册

BD640CT~BD6200CT

SURFACE MOUNT SCHOTTKYBARRIER RECTIFIERS

Unit : inch (mm)

TO-251AB

6.0 Amperes

40 to 200 Volts

CURRENT

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

.264(6.7)

.248(6.3)

.098(2.5)

.082(2.1)

.024(0.6)

.016(0.4)

• For surface mounted applications

• Low profile package

.216(5.5)

.200(5.1)

• Built-in strain relief

• Low power loss, High efficiency

• High surge capacity

• For use in low voltage high frequency inverters, free wheeling, and

polarity protection applications

• High temperature soldering guaranteed:260^oC/10 seconds at terminals

.071(1.8)

.051(1.3)

.032(0.8)

.012(0.3)

• In compliance with EU RoHS 2002/95/EC directives

.02(0.5)

.09 .09

MECHANICALDATA

(2.3) (2.3)

• Case: TO-251AB molded plastic

• Terminals: Solder plated, solderable per MIL-STD-750,Method 2026

• Polarity: As marking

• Standard packaging: 16mm tape (EIA-481)

• Weight: 0.0104 ounces, 0.297grams.

MAXIMUM RATINGS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

BD640CT

BD645CT BD650CT BD660CT BD680CT BD690CT BD6100CT BD6150CT BD6200CT

PARAMETER

SYMBOL

V_RRM

UNITS

Maximum Recurrent Peak Reverse Voltage

31.5

100

150

105

150

200

140

200

Maximum RMS Voltage

V_RMS

Maximum DC Blocking Voltage

V_DC

100

Maximum Average Forward Current (See Figure 1)

I_F(AV)

6.0

Peak Forward Surge Current :8.3ms single half sine-wave

superimposed on rated load(JEDEC method)

I_FSM

Maximum Forward Voltage at 3.0A per leg

V_F

0.70

0.75

0.80

0.90

Maximum DC Reverse Current

at Rated DC Blocking Voltage

=25^O

=100^O

0.05

I_R

Typical Thermal Resistance

R_θJC

^OC

/ W

^OC

-55 to +150

Operating Junction and Storage Temperature Range

T_J,T_STG

-65 to +175

Note: Both Bonding and Chip structure are available.

STAD-APR.30.2009

PAGE . 1

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