Datasheet > BD5224G-1

BD5224G-1

更新时间： 2024-03-03 10:08:23

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
22页	1467K
描述
ROHM's Free Time Delay Setting CMOS Voltage Detector ICs are highly accurate, with ultra-low curre

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BD5224G-1 数据手册

Nano Energy^TM

Datasheet

Voltage Detector (Reset) IC Series

Free Time Delay Setting

CMOS Voltage Detector (Reset) IC

BD52xxG-1 Series

General Description

Key Specifications

ROHM's Free Time Delay Setting CMOS Voltage

Detector ICs are highly accurate, with ultra-low current

consumption feature that uses CMOS process. Delay

time setting can be control by an external capacitor. The

lineup includes N-channel open drain output

(BD52xxG-1). The devices are available for specific

detection voltage ranging from 0.9 V to 5.0 V with 0.1 V

increment. The time delay has ±30 % accuracy in the

overall operating temperature range of -40 °C to 85 °C.

◼ Detection Voltage Accuracy:

±1.0 % ±5 mV (V_DET= 0.9 V to 1.6 V)

±0.9 % (V_DET= 1.7 V to 5.0 V)

◼ Detection Voltage:

0.9 V to 5.0 V (Typ)

0.1 V step

◼ Ultra-Low Current Consumption:

270 nA (Typ)

◼ Time Delay Accuracy:

±30 % (-40 °C to +85 °C,

CT pin capacitor ≥ 1 nF)

Features

Package

W(Typ) x D(Typ) x H(Max)

2.90 mm x 2.80 mm x 1.25 mm

◼ Nano Energy™

SSOP5:

◼ Delay Time Setting Controlled by External Capacitor

◼ Nch Open Drain Output Type

◼ Very Small, Lightweight and Thin Package

◼ Package SSOP5 is similar to SOT-23-5 (JEDEC)

Application

All consumer devices that requires voltage detection

Typical Application Circuit

V_DD1

V_DD2

R_L

Microcontroller

RST

C_VDD

BD52xxG-1

C_CT

(Noise-reduction

Capacitor)

C_L

GND

Figure 1. Open Drain Output Type

BD52xxG-1 Series

Pin Configuration

Pin Description

SSOP5

TOP VIEW

PIN No. PIN Name

Function

Output pin

VOUT

VDD

GND

N.C.

Power supply voltage

GND

No connection pin

Capacitor connection pin for

output delay time setting

N.C. pin is electrically open and can

be connected to either VDD or GND.

VOUT VDD GND

Nano Energy™ is a trademark or a registered trademark of ROHM Co., Ltd.

〇Product structure : Silicon integrated circuit 〇This product has no designed protection against radioactive rays

www.rohm.com

TSZ22111 • 14 • 001

TSZ02201-0GBG2G600060-1-2

18.May.2023 Rev.002

1/19

12 3 4 5 6 7...22

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