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BD508AF PDF预览

BD508AF

更新时间: 2024-01-05 02:26:39
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
3页 122K
描述
with to-3PFa package,high voltage,Silicon NPN Power Transistors

BD508AF 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.69最大集电极电流 (IC):2 A
配置:Single最小直流电流增益 (hFE):40
JESD-609代码:e0最高工作温度:140 °C
极性/信道类型:PNP最大功率耗散 (Abs):1 W
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)标称过渡频率 (fT):180 MHz
Base Number Matches:1

BD508AF 数据手册

 浏览型号BD508AF的Datasheet PDF文件第2页浏览型号BD508AF的Datasheet PDF文件第3页 
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
BU508AF  
DESCRIPTION  
·With TO-3PFa package  
·High voltage  
·High speed switching  
APPLICATIONS  
·For use in horizontal deflection  
circuits of high resolution monitors  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
3
Absolute maxmum ratings(Ta=25)  
SYMBO
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current (DC)  
Collector current (Pulse)  
Base current (DC)  
CONDITIONS  
Open emitter  
VALUE  
1500  
700  
7.5  
UNIT  
V
Open base  
V
Open collector  
V
8
A
ICP  
15  
A
IB  
4
A
IBM  
Base current (Pulse)  
Total power dissipation  
Junction temperature  
Storage temperature  
6
A
Ptot  
TC=25  
34  
W
Tj  
150  
-65~150  
Tstg  

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