BD3539NUX

更新时间： 2024-02-24 10:03:05

品牌	Logo	应用领域
罗姆 - ROHM		稳压器动态存储器双倍数据速率
页数	文件大小	规格书
12页	434K
描述
Termination Regulators for DDR-SDRAMs

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中文翻译

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数据手册

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BD3539NUX 数据手册

Technical Note

BD3539FVM,BD3539NUX

●Note for Use

1.Absolute maximum ratings

For the present product, thoroughgoing quality control is carried out, but in the event that applied voltage, working

temperature range, and other absolute maximum rating are exceeded, the present product may be destroyed. Because

it is unable to identify the short mode, open mode, etc., if any special mode is assumed, which exceeds the absolute

maximum rating, physical safety measures are requested to be taken, such as fuses, etc.

2.GND potential

Bring the GND terminal potential to the minimum potential in any operating condition.

3.Thermal design

Consider allowable loss (Pd) under actual working condition and carry out thermal design with sufficient margin provided.

4.Terminal-to-terminal short-circuit and erroneous mounting

When the present IC is mounted to a printed circuit board, take utmost care to direction of IC and displacement. In the

event that the IC is mounted erroneously, IC may be destroyed. In the event of short-circuit caused by foreign matter that

enters in a clearance between outputs or output and power-GND, the IC may be destroyed.

5.Operation in strong electromagnetic field

The use of the present IC in the strong electromagnetic field may result in maloperation, to which care must be taken.

6.Built-in thermal shutdown protection circuit

The present IC incorporates a thermal shutdown protection circuit (TSD circuit). The working temperature is 175°C

(standard value) and has a -15°C (standard value) hysteresis width. When the IC chip temperature rises and the TSD

circuit operates, the output terminal is brought to the OFF state. The built-in thermal shutdown protection circuit (TSD

circuit) is first and foremost intended for interrupt IC from thermal runaway, and is not intended to protect and warrant the

IC. Consequently, never attempt to continuously use the IC after this circuit is activated or to use the circuit with the

activation of the circuit premised.

7.Capacitor across output and GND

In the event a large capacitor is connected across output and GND, when Vcc and VIN are short-circuited with 0V or GND

for some kind of reasons, current charged in the capacitor flows into the output and may destroy the IC. Use a capacitor

smaller than 1000 μF between output and GND.

8.Inspection by set substrate

In the event a capacitor is connected to a pin with low impedance at the time of inspection with a set substrate, there is a

fear of applying stress to the IC. Therefore, be sure to discharge electricity for every process. As electrostatic

measures, provide grounding in the assembly process, and take utmost care in transportation and storage. Furthermore,

when the set substrate is connected to a jig in the inspection process, be sure to turn OFF power supply to connect the jig

and be sure to turn OFF power supply to remove the jig.

9. Inputs to IC terminals

This device is a monolithic IC with P⁺isolation between P-substrate and each element as illustrated below. This P-layer

and the N-layer of each element form a PN junction which works as:

・a diode if the electric potentials at the terminals satisfy the following relationship; GND>Terminal A>Terminal B, or

・a parasitic transistor if the electric potentials at the terminals satisfy the following relationship; Terminal B>GND Terminal A.

The structure of the IC inevitably forms parasitic elements, the activation of which may cause interference among circuits,

and/or malfunctions contributing to breakdown. It is therefore requested to take care not to use the device in such

manner that the voltage lower than GND (at P-substrate) may be applied to the input terminal, which may result in

activation of parasitic elements.

Resistor

Transistor (NPN)

Pin A

Pin B

Pin A

P⁺

Parasitic

element

Parasitic

element

P substrate

GND

Parasitic element

Other adjacent elements

www.rohm.com

2009.10 - Rev.A

8/11

1...5 6 789 10 11 12

中文翻译

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BD354N	THINKISEMI	35 Ampere Standard Type Negative Block Rectifier Diodes for Automotive Alternators	获取价格
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BD354P	THINKISEMI	35 Ampere Standard Type Negative Block Rectifier Diodes for Automotive Alternators	获取价格
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BD3551HFN	ROHM	Silicon monolithic integrated circuit 1ch Series Regulator Driver IC	获取价格
BD3551HFN-TL	ROHM	暂无描述	获取价格
BD3551HFN-TR	ROHM	暂无描述	获取价格
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