Datasheet
General-Purpose 6ch Electronic Volume with
Built-in Advanced Switch
BD3460FS
General Description
Key Specifications
BD3460FS is a 6ch electronic volume which has the
best audio efficiency in the industry. It has a ground
isolation amplifier when connecting with external voice
inputs such as portable audio and car navigation. Also,
BD3460FS has a volume switching shock sound
prevention technique called “Advanced Switch,”
supporting the construction of high quality car audio
space by simple control.
Power Supply Voltage Range:
7.0V to 9.5V
25mA (Typ)
0.0004%(Typ)
2.35Vrms (Typ)
-105dB (Typ)
+23dB to -79dB
1.9µVrms(Typ)
1.6µVrms (Typ)
-40°C to +85°C
Circuit Current (no signal):
Total Harmonic Distortion:
Maximum Input Voltage:
Cross-talk Between Selectors:
Volume Control Range:
Output Noise Voltage:
Residual Output Noise Voltage:
Operating Temperature Range:
Features
Package
W(Typ) x D(Typ) x H(Max)
■
■
■
Reduce switching noise of volume by using
Advanced Switch circuit.
Built-in buffered stereo ground isolation amplifier
inputs, ideal for external input.
Energy-saving design resulting in low-current
consumption by utilizing the Bi-CMOS process. It
has the advantage in quality over scaling down
the power heat control of the internal regulators.
Arranges all I/O terminals together for easier PCB
layout and smaller PCB area.
■
■
I2C BUS can be controlled by 3.3V / 5V.
SSOP-A24
10.00mm x 7.80mm x 2.10mm
Applications
It is optimal for car audio. It can also be used for car
navigation, audio equipment of mini Compo, micro
Compo, DVD, TV, etc.
Typical Application Circuit
FIL
24
GND
SDA
22
SCL
21
CS
VCC OUTF1 OUTF2 OUTR1 OUTR2 OUTS1 OUTS2
0.1μ
10μ
10μ
4.7μ
4.7μ
4.7μ
4.7μ
4.7μ
4.7μ
2.2K
20
19
18
17
16
15
14
13
23
VCC
VCC/2
GND
I2C BUS LOGIC
■6 ch Volume
+
+
2
2
3
3
d
d
B
B
~
to
-
-7
7
9
9
d
d
B
B
/
/
1
1
dBdB step,-∞
★: Advanced switch circuit
BUFFERED
GND ISO AMP
BUFFERED
GND ISO AMP
100k
100k
100k
100k
100k
100k
100k
100k
100k
100k
100k
Unit
R : [Ω]
C : [F]
1
2
3
4
5
6
7
8
9
10
11
12
10μ
PIN1
1μ
1μ
1μ
1μ
1μ
1μ
INS2
4.7μ
4.7μ
10μ
10μ
10μ
INF1
INF2
INR1
INR2
INS1
PIN2
NIN2 DIFFOUT2 DIFFOUT1 NIN1
○Product structure:Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays
www.rohm.com
TSZ02201-0C2C0E100350-1-2
16.Dec.2015 Rev.001
© 2015 ROHM Co., Ltd. All rights reserved.
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