Datasheet > BD3460FS_15

BD3460FS_15

更新时间： 2022-02-26 13:44:49

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
30页	2867K
描述
General-Purpose 6ch Electronic Volume with Built-in Advanced Switch

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BD3460FS_15 数据手册

Datasheet

General-Purpose 6ch Electronic Volume with

Built-in Advanced Switch

BD3460FS

General Description

Key Specifications

BD3460FS is a 6ch electronic volume which has the

best audio efficiency in the industry. It has a ground

isolation amplifier when connecting with external voice

inputs such as portable audio and car navigation. Also,

BD3460FS has a volume switching shock sound

prevention technique called “Advanced Switch,”

supporting the construction of high quality car audio

space by simple control.



Power Supply Voltage Range:

7.0V to 9.5V

25mA (Typ)

0.0004%(Typ)

2.35Vrms (Typ)

-105dB (Typ)

+23dB to -79dB

1.9µVrms(Typ)

1.6µVrms (Typ)

-40°C to +85°C

Circuit Current (no signal):

Total Harmonic Distortion:

Maximum Input Voltage:

Cross-talk Between Selectors:

Volume Control Range:

Output Noise Voltage:

Residual Output Noise Voltage:

Operating Temperature Range:

Features

Package

W(Typ) x D(Typ) x H(Max)

■

Reduce switching noise of volume by using

Advanced Switch circuit.

Built-in buffered stereo ground isolation amplifier

inputs, ideal for external input.

Energy-saving design resulting in low-current

consumption by utilizing the Bi-CMOS process. It

has the advantage in quality over scaling down

the power heat control of the internal regulators.

Arranges all I/O terminals together for easier PCB

layout and smaller PCB area.

■

I²C BUS can be controlled by 3.3V / 5V.

SSOP-A24

10.00mm x 7.80mm x 2.10mm

Applications

It is optimal for car audio. It can also be used for car

navigation, audio equipment of mini Compo, micro

Compo, DVD, TV, etc.

Typical Application Circuit

FIL

GND

SDA

SCL

VCC OUTF1 OUTF2 OUTR1 OUTR2 OUTS1 OUTS2

0.1μ

10μ

4.7μ

2.2K

VCC

VCC/2

GND

I²C BUS LOGIC

■6 ch Volume

～

-7

ｄ

dBdB step,-∞

★： Advanced switch circuit

BUFFERED

GND ISO AMP

BUFFERED

GND ISO AMP

100k

Unit

R : [Ω]

C : [F]

10μ

PIN1

1μ

INS2

4.7μ

10μ

INF1

INF2

INR1

INR2

INS1

PIN2

NIN2 DIFFOUT2 DIFFOUT1 NIN1

○Product structure：Silicon monolithic integrated circuit ○This product has no designed protection against radioactive rays

www.rohm.com

TSZ02201-0C2C0E100350-1-2

16.Dec.2015 Rev.001

1/26

TSZ22111・14・001

12 3 4 5 6 7...30

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