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BD2204GUL-E2 PDF预览

BD2204GUL-E2

更新时间: 2024-11-28 12:21:59
品牌 Logo 应用领域
罗姆 - ROHM 开关
页数 文件大小 规格书
24页 645K
描述
Power Supply Selector Switch IC for SD Cards

BD2204GUL-E2 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:2.31
模拟集成电路 - 其他类型:DPST峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

BD2204GUL-E2 数据手册

 浏览型号BD2204GUL-E2的Datasheet PDF文件第2页浏览型号BD2204GUL-E2的Datasheet PDF文件第3页浏览型号BD2204GUL-E2的Datasheet PDF文件第4页浏览型号BD2204GUL-E2的Datasheet PDF文件第5页浏览型号BD2204GUL-E2的Datasheet PDF文件第6页浏览型号BD2204GUL-E2的Datasheet PDF文件第7页 
BD2204GUL  
Datasheet  
Power Supply Selector Switch IC  
for SD Cards  
BD2204GUL  
Description  
BD2204GUL is high side switch IC that has built-in 2  
Key Specifications  
„Input voltage range:  
VIN1=2.7 to 4.5V  
VIN2=1.2 to 2.4V  
120m(Typ.)  
25μA(Typ.)  
circuits of MOSFET. Switch has achieved 120mΩ  
(Typ.) on-resistance. 3.3V power supply and 1.8V  
power supply for memory card can be selected by SEL  
terminal. Moreover, it has built-in simultaneous-on  
prevention function at power switching, reverse-current  
protection function to prevent reverse-current from  
output terminal to input terminal at power-off, and  
discharge circuit to discharge electricity in output  
terminal.  
„ON resistance:  
„Operating current:  
„Standby current:  
0.01μA(Typ.)  
-40 to +85℃  
„Operating temperature range:  
Package  
VCSP50L1  
W(Typ.) D(Typ.) H (Max.)  
1.50mm x 1.00mm x 0.55mm  
Features  
Dual channel of low on resistance (Typ. = 120m)  
N-channel MOSFET built in  
„
„ 3.3V and 1.8V are chosen and an output is  
possible.  
„ 0.5A Continuous Current load  
„ Reverse-current protection when power switch off  
„ Prevent VIN1 and VIN2 from simultaneous-on.  
„ Output Discharge Circuit  
„ Thermal Shutdown  
„ Active-High Control Logic  
„ VCSP50L1 package  
VCSP50L1  
Applications  
Digital cameras  
Digital video camera  
SD cards slot  
Typical Application Circuit  
3.3V(Typ.)  
VOUT  
LOAD  
VIN1  
1.8V(Typ.)  
CIN  
CL  
VIN2  
EN  
GND  
SEL  
Figure 1. Typical application circuit  
Product structureSilicon monolithic integrated circuit This product is not designed protection against radioactive rays  
www.rohm.com  
TSZ02201-0E3E0H300030-1-2  
07.Aug.2012 Rev.001  
©
ROHM Co., Ltd. All rights reserved.  
1/21  
TSZ2211114001  

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