Datasheet > BD16951EFV-M

BD16951EFV-M

更新时间： 2024-03-03 10:09:49

品牌	Logo	应用领域
罗姆 - ROHM		栅
页数	文件大小	规格书
55页	2591K
描述
The BD16951EFV is an AEC-Q100 automotive qualified 2-channel Half-Bridge Gate Driver, controlled b

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BD16951EFV-M 数据手册

BD16951EFV-M

Selection of Components Externally Connected

Input Capacitor C_VS

The input capacitor (C_VS) lowers the power supply impedance and averages the input current. The C_VSvalue is selected

according to the impedance of the power supply that is used. A ceramic capacitor with a small equivalent series resistance

(ESR) should be used. Although the capacitance requirement varies according to the impedance of the power supply that is

used as well as the load current value, it is generally in the range of 1.0μF.

Input Capacitor C_VCC

The input capacitor (C_VCC) lowers the power supply impedance and averages the input current. The C_VCCvalue is selected

according to the impedance of the power supply that is used. A ceramic capacitor with a small equivalent series resistance

(ESR) should be used. A capacitor value of 0.1μF is recommended.

Charge Pump Capacitor C_CP1

The Charge pump capacitor C_CP1is required for smoothing the ripple voltage. A capacitor value of 0.1μF is recommended.

Using a capacitor with a capacitance lower than 0.1μF, results in a larger ripple voltage. Conversely, using a capacitor with a

capacitance greater than 0.1μF results in a larger rush current during start-up, but ripple voltage becomes lower.

Charge Pump Capacitor C_CP2

The charge pump capacitor C_CP2is required for charging up the voltage. A capacitor value of 0.1μF is recommended. Using

a capacitor with a capacitance lower than 0.1μF, results in a larger ripple voltage. Conversely, using a capacitor with a

capacitance greater than 0.1μF results in a larger rush current during start-up, but ripple voltage becomes lower.

External N-ch MOSFET

BD16951EFV is the gate driver for high side and low side N-channel MOSFETs. Select MOSFETs with the required current

capacity to drive the motor and a Gate-Source breakdown voltage ≥ 12V.

External Parts

Symbol

Part

C_VS

1.0μF, -/+10%

0.1μF, -/+10%

N-Channel MOSFET

C_VCC

C_CP1

C_CP2

T_GH1, T_GH2, T_GL1, T_GL2

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TSZ22111･15･001

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4/52

13.JAN.2023 Rev.001

1 2 345 6 7...55

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