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BD136G PDF预览

BD136G

更新时间: 2024-02-15 04:55:00
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管功率双极晶体管放大器局域网
页数 文件大小 规格书
4页 42K
描述
Plastic Medium Power Silicon PNP Transistor

BD136G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SIP
包装说明:TO-126, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.1
外壳连接:COLLECTOR最大集电极电流 (IC):1.5 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):25JEDEC-95代码:TO-126
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:NO端子面层:MATTE TIN (315)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:10晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):160 MHz
Base Number Matches:1

BD136G 数据手册

 浏览型号BD136G的Datasheet PDF文件第2页浏览型号BD136G的Datasheet PDF文件第3页浏览型号BD136G的Datasheet PDF文件第4页 
BD136, BD138, BD140  
Plastic Medium Power  
Silicon PNP Transistor  
This series of plastic, medium−power silicon PNP transistors are  
designed for use as audio amplifiers and drivers utilizing  
complementary or quasi complementary circuits.  
http://onsemi.com  
Features  
Pb−Free Packages are Available*  
1.5 A POWER TRANSISTORS  
PNP SILICON  
DC Current Gain − h = 40 (Min) @ I = 0.15 Adc  
FE  
C
BD 136, 138, 140 are complementary with BD 135, 137, 139  
45, 60, 80 V, 12.5 W  
MAXIMUM RATINGS  
TO−225AA  
CASE 77  
STYLE 1  
Rating  
Symbol Value  
Unit  
Collector−Emitter Voltage  
BD136  
BD138  
BD140  
V
V
V
45  
60  
80  
Vdc  
CEO  
CBO  
EBO  
3
2
1
Collector−Base Voltage  
BD136  
BD138  
BD140  
45  
60  
100  
Vdc  
MARKING DIAGRAM  
Emitter−Base Voltage  
Collector Current  
Base Current  
5.0  
1.5  
0.5  
Vdc  
Adc  
Adc  
YWW  
BD1xx  
I
C
I
B
xx  
Y
= 36, 38, 40  
= Year  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.25  
10  
Watts  
mW/°C  
A
WW  
= Work Week  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
12.5  
100  
Watts  
mW/°C  
C
ORDERING INFORMATION  
Operating and Storage Junction  
Temperature Range  
T , T  
55 to  
+150  
°C  
J
stg  
Device  
Package  
Shipping  
Maximum ratings are those values beyond which device damage can oc-  
cur. Maximum ratings applied to the device are individual stress limit values  
(not normal operating conditions) and are not valid simultaneously. If these  
limits are exceeded, device functional operation is not implied, damage  
may occur and reliability may be affected.  
BD136  
TO−225AA  
500 Units/Box  
500 Units/Box  
BD136G  
TO−225AA  
(Pb−Free)  
BD138  
TO−225AA  
500 Units/Box  
500 Units/Box  
BD138G  
TO−225AA  
(Pb−Free)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
BD140  
TO−225AA  
500 Units/Box  
500 Units/Box  
Thermal Resistance,  
q
10  
°C/W  
BD140G  
TO−225AA  
(Pb−Free)  
JC  
Junction−to−Case  
Thermal Resistance,  
Junction−to−Ambient  
q
100  
°C/W  
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2005  
1
Publication Order Number:  
April, 2005 − Rev. 12  
BD136/D  

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