Datasheet > BCX5616Q

BCX5616Q

更新时间： 2023-12-06 20:02:18

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	420K
描述
NPN, 80V, 1A, SOT89

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BCX5616Q 数据手册

BCX5616Q

Electrical Characteristics (@ T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

BV_CBO

BV_CEO

BV_EBO

Min

100

Typ

—

Max

—

Unit

Test Condition

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage (Note 10)

Emitter-Base Breakdown Voltage

I_C= 100µA

—

I_C= 10mA

I_E= 100µA

—

0.1

V_CB= 30V

—

Collector Cut-off Current

µA

I_CBO

I_EBO

V_CB= 30V, T_A= +150°C

V_EB= 5V

Emitter Cut-off Current

—

I_C= 5mA, V_CE= 2V

I_C= 150mA, V_CE= 2V

I_C= 500mA, V_CE= 2V

100

—

250

—

Static Forward Current Transfer Ratio (Note 10)

—

h_FE

Collector-Emitter Saturation Voltage (Note 10)

Base-Emitter Turn-On Voltage (Note 10)

—

0.5

1.0

V_CE(sat)

V_BE(on)

I_C= 500mA, I_B= 50mA

I_C= 500mA, V_CE= 2V

I_C= 50mA, V_CE= 10V

f = 100MHz

Transition Frequency

Output Capacitance

150

—

MHz

Cobo

V_CB= 10V, f = 1MHz

Notes:

10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

0.8

250

200

0.6

0.4

150

100

0.2

0.001

0.01

0.1

V_CE, COLLECTOR-EMITTER VOLTAGE (V)

Fig. 1 Typical Collector Current

I_C, COLLECTOR CURRENT (A)

Fig. 2 Typical DC Current Gain vs. Collector Current

vs. Collector-Emitter Voltage

4 of 7

www.diodes.com

November 2020

BCX5616Q

Datasheet number: DS37024 Rev. 3 – 2

1 2 345 6 7

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