Datasheet > BCX5616Q

BCX5616Q

更新时间： 2023-12-06 20:02:18

品牌	Logo	应用领域
美台 - DIODES		/
页数	文件大小	规格书
7页	420K
描述
NPN, 80V, 1A, SOT89

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BCX5616Q 数据手册

BCX5616Q

Absolute Maximum Ratings (@ T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

100

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Collector Current

Continuous Base Current

Peak Pulse Base Current

2.0

100

200

I_CM

I_B

I_BM

Thermal Characteristics (@ T_A= +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

(Note 5)

(Note 6)

(Note 7)

(Note 5)

(Note 6)

(Note 7)

(Note 8)

Power Dissipation

1.5

P_D

2.0

125

Thermal Resistance, Junction to Ambient Air

°C/W

R_θJA

Thermal Resistance, Junction to Lead

°C/W

°C

R_θJL

Operating and Storage Temperature Range

-55 to +150

T_J,T_STG

ESD Ratings (Note 9)

Characteristic

Electrostatic Discharge - Human Body Model

Electrostatic Discharge - Machine Model

Symbol

Value

Unit

JEDEC Class

ESD HBM

ESD MM

4,000

400

Notes:

5. For a device mounted with the exposed collector pad on 15mm x 15mm 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under

still air conditions whilst operating in a steady-state.

6. Same as note (6), except the device is mounted on 25mm x 25mm 1oz copper.

7. Same as note (6), except the device is mounted on 50mm x 50mm 1oz copper.

8. Thermal resistance from junction to solder-point (on the exposed collector pad).

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.

2 of 7

www.diodes.com

November 2020

BCX5616Q

Datasheet number: DS37024 Rev. 3 – 2

123 4 5 6 7

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