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BCX42_07 PDF预览

BCX42_07

更新时间: 2022-10-15 10:26:59
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体开关晶体管
页数 文件大小 规格书
7页 76K
描述
PNP Silicon AF and Switching Transistor

BCX42_07 数据手册

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BCX42  
PNP Silicon AF and Switching Transistor  
For general AF applications  
2
3
High breakdown voltage  
1
Low collector-emitter saturation voltage  
Complementary type: BCX41 (NPN)  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Type  
Marking  
Pin Configuration  
Package  
BCX42  
DKs  
SOT23  
1 = B  
2 = E  
3 = C  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
125  
125  
5
V
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CEO  
CBO  
EBO  
800  
1
mA  
A
I
C
Peak collector current  
Base current  
I
CM  
100  
200  
330  
mA  
I
B
Peak base current  
Total power dissipation  
I
BM  
mW  
°C  
P
tot  
T 79 °C  
S
150  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
2)  
K/W  
Junction - soldering point  
R
215  
thJS  
1Pb-containing package may be available upon special request  
2For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2007-04-27  
1

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