Datasheet > BCW30/T4

BCW30/T4

更新时间： 2024-02-14 22:00:26

品牌	Logo	应用领域
恩智浦 - NXP		开关光电二极管晶体管
页数	文件大小	规格书
6页	111K
描述
TRANSISTOR 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal

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BCW30/T4 技术参数

生命周期：	Active	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	compliant	风险等级：	5.63
最大集电极电流 (IC)：	0.1 A	集电极-发射极最大电压：	32 V
配置：	SINGLE	最小直流电流增益 (hFE)：	215
JEDEC-95代码：	TO-236AB	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性/信道类型：	PNP
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	100 MHz
Base Number Matches：	1

BCW30/T4 数据手册

NXP Semiconductors

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definitions and disclaimers. No changes were made to the technical content, except for package outline

drawings which were updated to the latest version.

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Printed in The Netherlands

R75/05/pp6

Date of release: 2004 Jan 13

Document order number: 9397 750 12403

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BCW30LO	ALLEGRO	获取价格	Small Signal Bipolar Transistor, 32V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB