BCR30FR-8LB
Data Sheet
Electrical Characteristics
Parameter
Symbol
Min.
—
Typ.
—
Max.
3.0
Unit
mA
mA
V
Test conditions
Repetitive peak off-state current
IDRM
Tj = 125C, VDRM applied
Tj = 150C, VDRM applied
—
—
5.0
On-state voltage
VTM
—
—
1.5
Tc = 25C, ITM = 45 A,
instantaneous measurement
Gate trigger voltage Note2
VFGT
VRGT
—
—
—
—
—
—
—
—
—
—
—
—
2.0
2.0
2.0
30
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
VRGT
V
Gate trigger current Note2
IFGT
IRGT
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
30
IRGT
30
Gate non-trigger voltage
Thermal resistance
VGD
0.2
0.1
—
10
1
—
—
—
—
—
—
—
V
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Junction to case Note3
Tj = 125C
Rth (j-c)
3.0
—
C/W
V/s
Critical-rate of rise of off-state
commutation voltage Note4
(dv/dt)c
—
Tj = 150C
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth(c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125°C/150°C
(di/dt)c
2. Rate of decay of on-state commutating current
(di/dt)c = - 16 A/ms
Time
Main Current
Main Voltage
Time
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
R07DS1463EJ0100 Rev.1.00
Oct. 10, 2019
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