Datasheet > BCR1AM-14A-TB

BCR1AM-14A-TB

更新时间： 2022-04-12 03:35:28

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
4页	69K
描述
700V-1A-Triac Low Power Use

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BCR1AM-14A-TB 数据手册

BCR1AM-14A

Preliminary

Electrical Characteristics

BCR1AM-14A-1

BCR1AM-14A

(I_GTitem : 1)

Parameter

Repetitive peak off-state current

On-state voltage

Symbol

Unit

Test conditions

Min.

Typ. Max. Min. Typ. Max.

Tj = 125°C

V_DRMapplied

I_DRM

V_TM

—

0.5

1.6

—

0.5

1.6

Tc = 25°C, I_TM= 1.5 A

instantaneous

—

measurement

Gate trigger voltage^Note2

V_FGT

—

2.0

—

2.0

Tj = 25°C, V_D= 6 V

R_L= 6 Ω, R_G= 330 Ω

V_RGT

ΙΙΙ

III

V_RGT

V_FGT

I_FGT

I_RGT

Gate trigger curent^Note2

Tj = 25°C, V_D= 6 V

R_L= 6 Ω, R_G= 330 Ω

III

I_RGT

ΙΙΙ

I_FGT

—

ΙΙΙ

Tj = 125°C

V_D= 1/2 V_DRM

Junction to case^Note3

50 °C/W

Gate non-trigger voltage

Thermal resistance

V_GD

0.1

R_{th (j-c)}

—

Tj = 125°C

V/μs

Critical-rate of rise of off-state

commutating voltage^Note4

(dv/dt)c 1.0

2.0

—

Notes: 2. Measurement using the gate trigger characteristics measurement circuit.

3. Case temperature is measured at the T2 terminal 1.5 mm away from the molded case.

4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Commutating voltage and current waveforms

Test conditions

(inductive load)

1. Junction temperature

Time

Supply Voltage

Tj = 125°C

(di/dt)c

2. Rate of decay of on-state commutating current

(di/dt)c = – 0.5 A/ms

Time

Main Current

Main Voltage

3. Peak off-state voltage

V_D= 400 V

(dv/dt)c

R07DS1076EJ0100 Rev.1.00

May 30, 2013

Page 2 of 3

123 4

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