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BCR1AM-8P-A6 PDF预览

BCR1AM-8P-A6

更新时间: 2024-11-25 14:47:59
品牌 Logo 应用领域
瑞萨 - RENESAS 三端双向交流开关栅极
页数 文件大小 规格书
7页 91K
描述
400V, 1A, TRIAC, TO-92, SC-43A, 3 PIN

BCR1AM-8P-A6 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.75Is Samacsys:N
外壳连接:ISOLATED配置:SINGLE
换向电压的临界上升率-最小值:2 V/us最大直流栅极触发电流:5 mA
最大直流栅极触发电压:2 VJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3最大漏电流:0.5 mA
元件数量:1端子数量:3
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
最大均方根通态电流:1 A断态重复峰值电压:400 V
子类别:TRIACs表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED触发设备类型:TRIAC
Base Number Matches:1

BCR1AM-8P-A6 数据手册

 浏览型号BCR1AM-8P-A6的Datasheet PDF文件第2页浏览型号BCR1AM-8P-A6的Datasheet PDF文件第3页浏览型号BCR1AM-8P-A6的Datasheet PDF文件第4页浏览型号BCR1AM-8P-A6的Datasheet PDF文件第5页浏览型号BCR1AM-8P-A6的Datasheet PDF文件第6页浏览型号BCR1AM-8P-A6的Datasheet PDF文件第7页 
Preliminary Datasheet  
BCR1AM-8P  
Triac  
R07DS0178EJ0100  
Rev.1.00  
Low Power Use  
Sep 29, 2010  
Features  
IT (RMS) : 1 A  
DRM : 400 V  
I
I
Non-Insulated Type  
Planar Passivation Type  
V
FGTI , IRGTI, IRGT III : 5 mA (3 mA)Note5  
FGT III : 10 mA  
Outline  
RENESAS Package code: PRSS0003EA-A  
Package name: TO-92*)  
(
2
1. T Terminal  
1
2. T Terminal  
2
3. Gate Terminal  
3
1
1
3
2
Applications  
Contactless AC switch, fan motor, rice-cooker, electric pot, air cleaner, heater, refrigerator, washing machine, electric  
fan, vending machine, trigger circuit for low and medium triac, and other general purpose control applications  
Maximum Ratings  
Voltage class  
Parameter  
Symbol  
Unit  
8
Repetitive peak off-state voltageNote1  
Non-repetitive peak off-state voltageNote1  
VDRM  
VDSM  
400  
500  
V
V
Parameter  
Symbol  
Ratings  
Unit  
Conditions  
RMS on-state current  
IT (RMS)  
ITSM  
I2t  
1.0  
A
Commercial frequency, sine full wave  
360° conduction, Tc = 56CNote3  
Surge on-state current  
I2t for fusing  
10  
A
60Hz sinewave 1 full cycle, peak value,  
non-repetitive  
0.41  
A2s  
Value corresponding to 1 cycle of half  
wave 60Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
PGM  
PG (AV)  
VGM  
IGM  
1
W
W
V
0.1  
6
Peak gate current  
0.5  
A
Junction temperature  
Storage temperature  
Mass  
Tj  
– 40 to +125  
– 40 to +125  
0.23  
C  
C  
g
Tstg  
Typical value  
Notes: 1. Gate open.  
R07DS0178EJ0100 Rev.1.00  
Sep 29, 2010  
Page 1 of 6  

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