Datasheet > BCR1BM-16A

BCR1BM-16A

更新时间： 2024-11-28 12:32:15

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
4页	62K
描述
800V - 1A - Triac Low Power Use

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数据手册

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BCR1BM-16A 数据手册

Preliminary Datasheet

BCR1BM-16A

800V - 1A - Triac

R07DS0967EJ0001

Rev.0.01

Nov 28, 2012

Low Power Use

Features



I_{T (RMS)}: 1 A

_DRM: 800 V (Tj = 125C)

_FGTI, I_RGTI, I_RGTIII: 15 mA



Tj: 125 °C

Planar Passivation Type

Outline

RENESAS Package code: PRSS0003EA-A

(Package name: TO-92)

1. T Terminal

2. Gate Terminal

3. T Terminal

Applications

Washing machine, electric fan, air cleaner, other general purpose control applications

Maximum Ratings

Voltage class

Parameter

Symbol

Unit

Repetitive peak off-state voltage^Note1

V_DRM

800

Parameter

Symbol

Ratings

Unit

Conditions

RMS on-state current

I_{T (RMS)}

Commercial frequency, sine full wave

360° conduction, Tc = 49°C

Surge on-state current

I²t for fusing

I_TSM

I²t

60 Hz sinewave 1 full cycle, peak value,

non-repetitive

0.26

A²s

Value corresponding to 1 cycle of half

wave 60 Hz, surge on-state current

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

P_GM

P_{G (AV)}

V_GM

I_GM

0.1

Peak gate current

0.5

Junction temperature

Storage temperature

Mass

– 40 to +125

0.23

°C

Tstg

—

Typical value

R07DS0967EJ0001 Rev.0.01

Nov 28, 2012

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