BCR12PM-14LJ
Preliminary
Electrical Characteristics
Rated value
Symbo
l
Parameter
Unit
Test conditions
Min.
—
Typ.
—
Max.
2.0
Repetitive peak off-state current
On-state voltage
IDRM
VTM
mA
V
Tj = 150C, VDRM applied
—
—
1.6
Tc = 25C, ITM = 20 A,
instantaneous measurement
Gate trigger voltageNote2
VFGT
—
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
V
V
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
VRGT
VRGT
V
Gate trigger curentNote2
IFGT
mA
mA
mA
Tj = 25C, VD = 6 V, RL = 6 ,
RG = 330
IRGT
30
IRGT
30
Gate non-trigger voltage
VGD
0.2
0.1
—
10
1
—
—
—
—
—
—
—
V
Tj = 125C, VD = 1/2 VDRM
Tj = 150C, VD = 1/2 VDRM
Junction to caseNote3
Tj = 125C
V
Thermal resistance
Rth (j-c)
4.0
—
C/W
V/s
V/s
Critical-rate of rise of off-state
commutation voltageNote4
Notes: 1. Gate open.
(dv/dt)c
—
Tj = 150C
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
5. Make sure that your finished product containing this device meets your safe isolation requirements.
For safety, it's advisable that heatsink is electrically floating.
Commutating voltage and current waveforms
Test conditions
(inductive load)
1. Junction temperature
Time
Supply Voltage
Tj = 125/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –6.0A/ms
(di/dt)c
Time
Time
Main Current
Main Voltage
3. Peak off-state voltage
VD = 400 V
(dv/dt)c
V
D
R07DS0910EJ0100 Rev.1.00
Nov 14, 2012
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