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BCR12CM-16LH-1B00 PDF预览

BCR12CM-16LH-1B00

更新时间: 2022-10-15 10:05:12
品牌 Logo 应用领域
瑞萨 - RENESAS 可控硅
页数 文件大小 规格书
8页 93K
描述
Triac Medium Power Use The Product guaranteed maximum junction temperature 150?C

BCR12CM-16LH-1B00 数据手册

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Preliminary Datasheet  
BCR12CM-16LH  
Triac  
R07DS0261EJ0100  
Rev.1.00  
Mar 09, 2011  
Medium Power Use  
Features  
IT (RMS) : 12 A  
DRM : 800 V  
FGTI, IRGTI, IRGT III : 50 mA or 35mA(IGT item:1)  
High Commutation  
The Product guaranteed maximum junction  
temperature 150C  
Planar Type  
V
I
Outline  
RENESAS Package code: PRSS0004AA-A  
Package name: TO-220)  
(
4
2, 4  
1. T1 Terminal  
2. T2 Terminal  
3. Gate Terminal  
4. T2 Terminal  
3
1
1
2
3
Applications  
Switching mode power supply, motor control, heater control, and other general purpose AC power control applications  
Maximum Ratings  
Voltage class  
Parameter  
Symbol  
Unit  
16  
Repetitive peak off-state voltageNote1  
Non-repetitive peak off-state voltageNote1  
Notes: 1. Gate open.  
VDRM  
VDSM  
800  
960  
V
V
Parameter  
Symbol  
Ratings  
Unit  
Conditions  
RMS on-state current  
IT (RMS)  
ITSM  
I2t  
12  
120  
60  
A
Commercial frequency, sine full wave  
360conduction, Tc = 123C Note3  
60 Hz sinewave 1 full cycle, peak value,  
non-repetitive  
Surge on-state current  
I2t for fusion  
A
A2s  
Value corresponding to 1 cycle of half  
wave 60 Hz, surge on-state current  
Peak gate power dissipation  
Average gate power dissipation  
Peak gate voltage  
PGM  
PG (AV)  
VGM  
IGM  
5
W
W
V
0.5  
10  
2
Peak gate current  
A
Junction Temperature  
Storage temperature  
Mass  
Tj  
–40 to +150  
–40 to +150  
2.0  
C  
C  
g
Tstg  
Typical value  
R07DS0261EJ0100 Rev.1.00  
Mar 09, 2011  
Page 1 of 7  

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