Datasheet > BCR10PM-12LG_07

BCR10PM-12LG_07

更新时间： 2022-12-14 14:52:55

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
8页	132K
描述
Triac Medium Power Use

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数据手册

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BCR10PM-12LG_07 数据手册

BCR10PM-12LG

Holding Current vs.

Junction Temperature

Latching Current vs.

Junction Temperature

10³

Typical Example

Distribution

–

, G

Typical Example

10²

10¹

–

, G

Typical Example

40 80

10¹

10⁰

–60–40–20 0 20 40 60 80 100120140160

–40

120

160

Junction Temperature (°C)

Breakover Voltage vs.

Junction Temperature

Breakover Voltage vs.

Rate of Rise of Off-State Voltage (Tj=125°C)

160

Typical Example

Tj = 125°C

Typical Example

140

120

100

140

120

100

III Quadrant

I Quadrant

10¹2 3 5 7 10²2 3 5 7 10³2 3 5 7 10⁴

–60–40–20 0 20 40 60 80 100120140160

Junction Temperature (°C)

Rate of Rise of Off-State Voltage (V/µs)

Breakover Voltage vs.

Rate of Rise of Off-State Voltage (Tj=150°C)

Commutation Characteristics (Tj=125°C)

160

Time

Typical Example

Tj = 125°C

Typical Example

Tj = 150°C

Main Voltage

(dv/dt)c

Main Current

140

120

100

I = 4A

τ = 500µs

(di/dt)c

Time

= 200V

f = 3Hz

10¹

Minimum

Characteristics

Value

I Quadrant

III Quadrant

I Quadrant

III Quadrant

10⁰

5 7 10¹

5 7 10²

10¹2 3 5 7 10²2 3 5 7 10³2 3 5 7 10⁴

Rate of Rise of Off-State Voltage (V/µs)

Rate of Decay of On-State

Commutating Current (A/ms)

REJ03G1509-0200 Rev.2.00 Jun 28, 2007

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