Datasheet > BCR08ES-14AT14B10

BCR08ES-14AT14B10

更新时间： 2022-05-28 10:36:18

品牌	Logo	应用领域
瑞萨 - RENESAS		可控硅
页数	文件大小	规格书
4页	102K
描述
700V - 0.8A - Triac Low Power Use

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BCR08ES-14AT14B10 数据手册

浏览型号BCR08ES-14AT14B10的Datasheet PDF文件第1页

BCR08ES-14A

Preliminary

Electrical Characteristics

Parameter

Symbol BCR08ES-14A#B10 BCR08ES-14A#B11 BCR08ES-14A#B12 Unit

Test conditions

Min.

Max.

Min.

Max.

Min.

Max.

Repetitive peak

off-state current

I_DRM

V_TM

—

1.0

—

1.0

—

1.0

mA Tj = 125C

V_DRMapplied

On-state voltage

—

2.0

—

2.0

—

2.0

Tc = 25C, I_TM=1.2 A

instantaneous

measurement

Gate trigger

voltage^Note2



V_FGT

—

2.0

―

—

2.0

—

2.0

Tj = 25C, V_D= 6 V

R_L= 6 , R_G= 330 





V_RGT



 V_RGT



V_FGT



Gate trigger

current^Note2



I_FGT

mA Tj = 25C, V_D= 6 V



R_L= 6 , R_G= 330 



I_RGT





I_RGT



I_FGT



―

Gate non-trigger

voltage

V_GD

0.2

—

0.2

—

0.2

—

Tj = 125C

V_D= 1/2 V_DRM

Thermal resistance

R_{th (j-a)}

—

C/W Junction to ambient^Note3

Critical-rate of rise of

off-state commutating

voltage ^Note4

(dv/dt)c

0.5

V/s Tj = 125C

Notes: 1. Gate open.

2. Measurement using the gate trigger characteristics measurement circuit.

3. Soldering with ceramic plate (25 mm  25 mm  t0.7 mm)

4. Test conditions of the critical-rate of rise of off-state commutating voltage are shown in the table below.

Commutating voltage and current waveforms

Test conditions

(inductive load)

1. Junction temperature

Time

Supply Voltage

Tj = 125°C

(di/dt)c

2. Rate of decay of on-state commutating current

(di/dt)c = – 0.4 A/ms

Time

Main Current

Main Voltage

3. Peak off-state voltage

V_D= 400 V

(dv/dt)c

R07DS0971EJ0001 Rev.0.01

Nov 28, 2012

Page 2 of 3

123 4

下载PDF

与BCR08ES-14AT14B10相关器件

型号	品牌	描述	获取价格	数据表
BCR08ES-14AT14B11	RENESAS	700V - 0.8A - Triac Low Power Use	获取价格
BCR08ES-14AT14B12	RENESAS	700V - 0.8A - Triac Low Power Use	获取价格
BCR08PN	INFINEON	NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, d	获取价格
BCR08PN_07	INFINEON	NPN/PNP Silicon Digital Transistor Array	获取价格
BCR08PN-E6327	INFINEON	Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon	获取价格
BCR08PNE6327BTSA1	INFINEON	Small Signal Bipolar Transistor,	获取价格