Datasheet > BCP51_07

BCP51_07

更新时间： 2024-09-30 03:21:31

品牌	Logo	应用领域
德欧泰克 - DIOTEC		晶体晶体管
页数	文件大小	规格书
2页	108K
描述
Surface Mount General Purpose Si-Epi-Planar Transistors

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BCP51_07 数据手册

BCP51 ... BCP53

Surface Mount General Purpose Si-Epi-Planar Transistors

Si-Epi-Planar Universaltransistoren für die Oberflächenmontage

PNP

Version 2006-06-26

Power dissipation

Verlustleistung

1.3 W

6.5^±0.2

3^±0.1

1.65

Plastic case

Kunststoffgehäuse

SOT-223

0.04 g

Type

Code

Weight approx.

Gewicht ca.

0.7

2.3

Plastic material has UL classification 94V-0

Gehäusematerial UL94V-0 klassifiziert

3.25

Standard packaging taped and reeled

Standard Lieferform gegurtet auf Rolle

Dimensions - Maße [mm]

1 = B 2/4 = C 3 = E

Maximum ratings (T_A= 25°C)

Grenzwerte (T_A= 25°C)

BCP51

45 V

BCP52

60 V

BCP53

80 V

Collector-Emitter-volt. – Kollektor-Emitter-Spannung

Collector-Base-voltage – Kollektor-Basis-Spannung

Power dissipation – Verlustleistung

B open

E open

C open

- V_CEO

- V_CBO

- V_EBO

P_tot

45 V

60 V

100 V

5 V

1.3 W ¹)

Collector current – Kollektorstrom (dc)

- I_C

1 A

Peak Collector current – Kollektor-Spitzenstrom

Peak Base current – Basis-Spitzenstrom

- I_CM

- I_BM

1.5 A

200 mA

Junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

T_j

T_S

-55...+150°C

-55…+150°C

Characteristics (T_j= 25°C)

Kennwerte (T_j= 25°C)

Min.

Typ.

Max.

DC current gain – Kollektor-Basis-Stromverhältnis ²)

- V_CE= 2 V, - I_C= 5 mA

all groups

h_FE

- V_CE= 2 V, - I_C= 150 mA

Group -6

Group -10

Group -16

h_FE

100

–

100

160

250

- V_CE= 2 V, - I_C= 500 mA

Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. ²)

all groups

h_FE

–

- I_C= 500 mA, - I_B= 50 mA

Base-Emitter voltage – Basis-Emitter-Spannung ²)

- V_CEsat

0.5 V

1 V

- I_C= 500 mA, - I_B= 50 mA

- V_BE

–

Mounted on P.C. board with 3 mm²copper pad at each terminal

Montage auf Leiterplatte mit 3 mm²Kupferbelag (Lötpad) an jedem Anschluss

Tested with pulses t_p= 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen t_p= 300 µs, Schaltverhältnis ≤ 2%

http://www.diotec.com/

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