Datasheet > BCP060T

BCP060T

更新时间： 2022-10-15 09:50:22

品牌	Logo	应用领域
BEREX		功效
页数	文件大小	规格书
5页	625K
描述
HIGH EFFICIENCY pHEMT POWER FET CHIP

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BCP060T 数据手册

BCP060T

ELECTRICAL CHARACTERISTIC (TUNED FOR GAIN) T_a= 25° C

TEST

FREQ.

SYMBOL

P_1dB

PARAMETER/TEST CONDITIONS

MIN.

TYPICAL

MAX.

UNIT

dBm

Output Power @ P_1dB(V_ds= 8V, I_ds= 50%

12 GHz

18 GHz

12 GHz

18 GHz

12 GHz

18 GHz

27.5

27.0

12.5

9.5

I_dss)

11.0

G_1dB

Gain @ P_1dB(V_ds= 8V, Ids = 50% I_dss

)

PAE

PAE @ P_1dB(V_ds= 8V, I_ds= 50% I_dss

)

I_dss

50 Ohm Noise Figure (V_ds=2V, I_dss=15 mA)

Saturated Drain Current (V_gs= 0V, V_ds= 2V)

12 GHz

1.34

180

240

-1.1

-15

-13

120

240

G_m

Transconductance (V_ds= 3V, V_gs= 50% I_dss

)

V_p

Pinch-off Voltage (I_ds= 0.6 mA, V_ds= 2V)

- 2.5

- 0.5

-12

BV_gd

BV_gs

R_th

Drain Breakdown Voltage (Ig = 0.6 mA, source open)

Source Breakdown Voltage (Ig = 0.6 mA, drain open)

Thermal Resistance (Au-Sn Eutectic Attach)

°C/W

MAXIMUM RATING (T_a= 25° C)

SYMBOLS

PARAMETERS

ABSOLUTE

CONTINUOUS

V_ds

V_gs

I_ds

Drain-Source Voltage

Gate-Source Voltage

Drain Current

12 V

-6 V

I_dss

8 V

-3 V

I_dss

I_gsf

P_in

T_ch

T_stg

P_t

Forward Gate Current

Input Power

Channel Temperature

Storage Temperature

Total Power Dissipation

30 mA

25 dBm

175° C

10 mA

@3dB Compression

150° C

-60° C - 150° C

2.6 W

-60° C - 150° C

2.2 W

Exceeding any of the above Maximum Ratings will result in reduced MTTF and may cause permanent damage to the device.

www.berex.com

BeRex, Inc. 1735 North 1^stStreet #302 San Jose, CA 95112 tel. (408) 452-5595

Specifications are subject to change without notice. ©BeRex 2011 Rev. 1.2

September 2011

123 4 5

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