BCP156
NPN Silicon
Planar High Performance Transistor
Elektronische Bauelemente
RoHS Compliant Product
SOT-89
Description
The BCP156 is designed for general purpose
switching and amplifier applications.
Features
* 3 Amp Continuous Current
* 60 Volt VCEO
* Low Saturation Voltage
Millimeter
Millimeter
Min. Max.
3.00 REF.
REF.
REF.
Min.
4.4
Max.
4.6
A
B
C
D
E
F
G
H
I
J
K
L
M
4.05
1.50
1.30
2.40
0.89
4.25
1.70
1.50
2.60
1.20
1.50 REF.
0.40
1.40
0.35
0.52
1.60
0.41
5q TYP.
0.70 REF.
Absolute Maximum Ratings at TA=25oC
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
80
60
5
V
V
V
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
3
6
IC
A
PD
W
1.2
Total Power Dissipation
O
Storage Temperature
Junction and
C
TJ,
-55~+150
Tstg
o
C
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
Typ.
Uni
t
Parameter
Symbol
Min
80
60
5
Max
Test Conditions
IC=100µA,IE=0
IC=10mA,IB=0
IE=100µA,IC=0
VCB= 60V,IE=0
VEB=4V,IC=0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
BVCBO
*BVCEO
-
-
-
-
-
V
V
BVEBO
ICBO
-
V
nA
-
-
-
100
100
-
nA
IEBO
*VCE(sat)1
*VCE(sat)2
-
-
-
0.3
0.6
1.25
1
IC=1A,IB=0.1A
0.12
0.43
0.9
V
V
V
V
Collector Saturation Voltage
IC=3A,IB=0.3A
IC=1A,IB=0.1A
IC=1A,VCE=2V
*VBE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
*hFE4
fT
Base-Emitter Saturation Voltage
-
0.8
-
70
200
200
VCE= 2V, IC=50mA
VCE= 2V, IC=500mA
VCE= 2V, IC=1A
100
300
-
DC Current Gain
80
40
170
80
-
-
VCE= 2V, IC=2A
VCE= 5V, IC=100mA,f=100MHz
VCB=10V, f=1MHz
Gain-Bandwidth Product
Output Capacitance
Time-On
175
-
MH
140
z
-
-
-
Cob
pF
30
-
ton
45
ns
VCC= 10V,IC=500mA,IB1=IB2=50mA
-
Time-Off
toff
800
≦
≦
Measured under pulse condition.Pulse width 300 s, Duty Cycle 2%
*
µ
Spice parameter data is available upon request for this device.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
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