5秒后页面跳转
BCP156 PDF预览

BCP156

更新时间: 2024-09-23 08:50:15
品牌 Logo 应用领域
SECOS 晶体晶体管
页数 文件大小 规格书
2页 559K
描述
Planar High Performance Transistor

BCP156 技术参数

生命周期:ObsoleteReach Compliance Code:compliant
风险等级:5.84Base Number Matches:1

BCP156 数据手册

 浏览型号BCP156的Datasheet PDF文件第2页 
BCP156  
NPN Silicon  
Planar High Performance Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
SOT-89  
Description  
The BCP156 is designed for general purpose  
switching and amplifier applications.  
Features  
* 3 Amp Continuous Current  
* 60 Volt VCEO  
* Low Saturation Voltage  
Millimeter  
Millimeter  
Min. Max.  
3.00 REF.  
REF.  
REF.  
Min.  
4.4  
Max.  
4.6  
A
B
C
D
E
F
G
H
I
J
K
L
M
4.05  
1.50  
1.30  
2.40  
0.89  
4.25  
1.70  
1.50  
2.60  
1.20  
1.50 REF.  
0.40  
1.40  
0.35  
0.52  
1.60  
0.41  
5q TYP.  
0.70 REF.  
Absolute Maximum Ratings at TA=25oC  
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
80  
60  
5
V
V
V
VCEO  
VEBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current (DC)  
Collector Current (Pulse)  
3
6
IC  
A
PD  
W
1.2  
Total Power Dissipation  
O
Storage Temperature  
Junction and  
C
TJ,  
-55~+150  
Tstg  
o
C
ELECTRICAL CHARACTERISTICS Tamb=25  
unless otherwise specified  
Typ.  
Uni  
t
Parameter  
Symbol  
Min  
80  
60  
5
Max  
Test Conditions  
IC=100µA,IE=0  
IC=10mA,IB=0  
IE=100µA,IC=0  
VCB= 60V,IE=0  
VEB=4V,IC=0  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
Emitter-Base Cutoff Current  
BVCBO  
*BVCEO  
-
-
-
-
-
V
V
BVEBO  
ICBO  
-
V
nA  
-
-
-
100  
100  
-
nA  
IEBO  
*VCE(sat)1  
*VCE(sat)2  
-
-
-
0.3  
0.6  
1.25  
1
IC=1A,IB=0.1A  
0.12  
0.43  
0.9  
V
V
V
V
Collector Saturation Voltage  
IC=3A,IB=0.3A  
IC=1A,IB=0.1A  
IC=1A,VCE=2V  
*VBE(sat)  
*VBE(on)  
*hFE1  
*hFE2  
*hFE3  
*hFE4  
fT  
Base-Emitter Saturation Voltage  
-
0.8  
-
70  
200  
200  
VCE= 2V, IC=50mA  
VCE= 2V, IC=500mA  
VCE= 2V, IC=1A  
100  
300  
-
DC Current Gain  
80  
40  
170  
80  
-
-
VCE= 2V, IC=2A  
VCE= 5V, IC=100mA,f=100MHz  
VCB=10V, f=1MHz  
Gain-Bandwidth Product  
Output Capacitance  
Time-On  
175  
-
MH  
140  
z
-
-
-
Cob  
pF  
30  
-
ton  
45  
ns  
VCC= 10V,IC=500mA,IB1=IB2=50mA  
-
Time-Off  
toff  
800  
Measured under pulse condition.Pulse width 300 s, Duty Cycle 2%  
*
µ
Spice parameter data is available upon request for this device.  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 2  

与BCP156相关器件

型号 品牌 获取价格 描述 数据表
BCP157 SECOS

获取价格

Medium Power Transistor
BCP160C BEREX

获取价格

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
BCP160C_18 BEREX

获取价格

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
BCP160T BEREX

获取价格

HIGH EFFICIENCY HETEROJUNCTION POWER FET CHIP
BCP1616A SECOS

获取价格

NPN Epitaxial Planar Transistor
BCP1616A-K SECOS

获取价格

NPN Epitaxial Planar Transistor
BCP1616A-K-C SECOS

获取价格

NPN Epitaxial Planar Transistor
BCP1616A-L SECOS

获取价格

NPN Epitaxial Planar Transistor
BCP1616A-L-C SECOS

获取价格

NPN Epitaxial Planar Transistor
BCP1616A-U SECOS

获取价格

NPN Epitaxial Planar Transistor