Datasheet > BC869

BC869

更新时间： 2024-06-27 12:11:52

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
5页	449K
描述
SOT-89

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中文翻译

获取价格

数据手册

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BC869 数据手册

BC869

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to BC868

 High Current

 Low Voltage

 Surface Mount device

SOT-89

MECHANICAL DATA



Case: SOT-89

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.055 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

-32

-20

Collector-Emitter Voltage

Emitter-Base Voltage

-5

Collector Current

-1

Collector Power Dissipation

500

°C/W

°C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

250

150

Storage Temperature

TSTG

-55 ~+150

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ

Unit

Conditions

V(BR)CBO

V(BR)CEO

V(BR)EBO

I_CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-32

-20

-5

I_C=-100uA，I_E=0

I =-1mA I =0

，

I_E=-100uA，I_C=0

V_CB=-25V, I_E=0

V_EB=-5V, I_C=0

-0.1 uA

Emitter cut-off current

I_EBO

V_CE=-10V, I_C=-5mA

V_CE=-1V, I_C=-0.5A

V_CE=-1V, I_C=-1A

h_FE1

100

DC current gain

h_FE2

375

h_FE3

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

-0.5

-1

I_C=-1A，I_B=-0.1A

V_CE=-1V, I_C=-1A

V_BE

f_T

-0.62

V_CE=-10V, I_C=-5mA

V_CE=-5V,I_C=-10mA,f=100

Transition frequency

MHz

CLASSIFICATION OF h_FE

Rank

BC869

100-375

CEC

BC869-16

100-250

CGC

BC869-25

160-375

CHC

Range

Marking

1 / 5

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