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BC858BRBK PDF预览

BC858BRBK

更新时间: 2024-01-04 02:37:24
品牌 Logo 应用领域
CENTRAL 开关光电二极管晶体管
页数 文件大小 规格书
2页 117K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, PLASTIC PACKAGE-3

BC858BRBK 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.8
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):220
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
最大功率耗散 (Abs):0.35 W子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC858BRBK 数据手册

 浏览型号BC858BRBK的Datasheet PDF文件第2页 
TM  
BC856 SERIES  
BC857 SERIES  
BC858 SERIES  
Central  
Semiconductor Corp.  
DESCRIPTION:  
SURFACE MOUNT  
The CENTRAL SEMICONDUCTOR BC856,  
BC857 and BC858 Series types are PNP Silicon  
Transistors manufactured by the epitaxial planar  
process, epoxy molded in a surface mount  
package, designed for general purpose switching  
and amplifier applications.  
PNP SILICON TRANSISTOR  
MARKING CODE: PLEASE SEE MARKING  
CODE TABLE ON FOLLOWING PAGE  
Note: Reverse Lead Codes Available, Add “R” to  
the end of the Part # and Marking Code.  
SOT-23 CASE  
MAXIMUM RATINGS (T =25°C)  
A
SYMBOL  
BC858  
30  
30  
BC857  
50  
BC856  
80  
65  
UNITS  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current  
V
V
V
V
V
CBO  
CEO  
EBO  
45  
5.0  
V
I
100  
200  
200  
350  
C
mA  
Peak Collector Current  
Peak Base Current  
I
CM  
mA  
I
mA  
BM  
Power Dissipation  
P
mW  
D
Operating and Storage  
Junction Temperature  
Thermal Resistance  
T ,T  
J stg  
-65 to +150  
357  
°C  
°C/W  
Θ
JA  
ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
15  
UNITS  
nA  
µA  
nA  
V
I
I
I
V
V
V
= 30V  
CBO  
CBO  
EBO  
CB  
CB  
EB  
= 30V, T =150°C  
A
4.0  
=5.0V  
I =10µA (BC858)  
100  
BV  
BV  
BV  
BV  
BV  
BV  
BV  
30  
50  
80  
30  
45  
65  
5.0  
CBO  
CBO  
C
I =10µA (BC857)  
V
C
I =10µA (BC856)  
V
CBO  
C
I =10mA (BC858)  
V
CEO  
C
I =10mA (BC857)  
V
CEO  
C
I =10mA (BC856)  
V
CEO  
C
I =10µA  
V
EBO  
E
V
V
V
V
I =10mA, I =0.5mA  
0.3  
V
CE(SAT)  
CE(SAT)  
BE(ON)  
BE(ON)  
C
B
B
I =100mA, I =5.0mA  
0.65  
0.75  
0.82  
V
C
I =2.0mA, V =5.0V  
CE  
0.6  
V
C
I =10mA, V =5.0V  
V
C
CE  
C
f
V
=5.0V, I =10mA, f=100MHz  
=5.0V, I =200µA,  
C
100  
MHz  
T
CE  
CE  
NF  
V
R =2KΩ, f= 1KHz, BW=200Hz  
10  
dB  
S
BC856A  
BC857A  
BC858A  
BC856B  
BC857B  
BC858B  
BC857C  
BC858C  
MIN  
125  
MAX  
250  
MIN  
220  
MAX  
475  
MIN  
420  
MAX  
h
V
=5.0V, I =2.0mA  
800  
FE  
CE  
C
R1 (10-September 2004)  

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