BC858BRLEADFREE

更新时间： 2024-02-08 15:57:39

品牌	Logo	应用领域
CENTRAL		晶体晶体管
页数	文件大小	规格书
2页	118K
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数据手册

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BC858BRLEADFREE 数据手册

BC856 SERIES

BC857 SERIES

BC858 SERIES

Central

Semiconductor Corp.

DESCRIPTION:

SURFACE MOUNT

The CENTRAL SEMICONDUCTOR BC856,

BC857 and BC858 Series types are PNP Silicon

Transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for general purpose switching

and amplifier applications.

PNP SILICON TRANSISTOR

MARKING CODE: PLEASE SEE MARKING

CODE TABLE ON FOLLOWING PAGE

Note: Reverse Lead Codes Available, Add “R” to

the end of the Part # and Marking Code.

SOT-23 CASE

MAXIMUM RATINGS (T =25°C)

SYMBOL

BC858

BC857

BC856

UNITS

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

CBO

CEO

EBO

5.0

100

200

350

Peak Collector Current

Peak Base Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

T ,T

J stg

-65 to +150

357

°C

°C/W

ELECTRICAL CHARACTERISTICS (T =25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

µA

= 30V

CBO

EBO

= 30V, T =150°C

4.0

=5.0V

I =10µA (BC858)

100

5.0

CBO

I =10µA (BC857)

I =10µA (BC856)

CBO

I =10mA (BC858)

CEO

I =10mA (BC857)

CEO

I =10mA (BC856)

CEO

I =10µA

EBO

I =10mA, I =0.5mA

0.3

CE(SAT)

BE(ON)

I =100mA, I =5.0mA

0.65

0.75

0.82

I =2.0mA, V =5.0V

0.6

I =10mA, V =5.0V

=5.0V, I =10mA, f=100MHz

=5.0V, I =200µA,

100

MHz

R =2KΩ, f= 1KHz, BW=200Hz

BC856A

BC857A

BC858A

BC856B

BC857B

BC858B

BC857C

BC858C

MIN

125

MAX

250

MIN

220

MAX

475

MIN

420

MAX

=5.0V, I =2.0mA

800

R1 (10-September 2004)

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