生命周期: | Transferred | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | 风险等级: | 5.56 |
Is Samacsys: | N | 配置: | SINGLE |
最小直流电流增益 (hFE): | 220 | JEDEC-95代码: | TO-236AB |
JESD-30 代码: | R-PDSO-G3 | 元件数量: | 1 |
端子数量: | 3 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | PNP | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC858BT | INFINEON |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, ROHS CO |
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BC858BT | YANGJIE |
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SOT-523 |
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BC858BT | BL Galaxy Electrical |
获取价格 |
30V,0.1A,General Purpose PNP Bipolar Transistor |
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BC858BT/R | ETC |
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TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-236AA |
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BC858BT117 | ROHM |
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Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, |
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BC858BT216 | ROHM |
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Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, |
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BC858BTA | DIODES |
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Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon |
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BC858B-TAPE-13 | NXP |
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TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |
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BC858B-TAPE-7 | NXP |
获取价格 |
TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa |
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BC858BTC | DIODES |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon |
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