Datasheet > BC858AS

BC858AS

更新时间： 2024-04-09 18:58:27

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
6页	488K
描述
-30V,-0.1A,General Purpose Dual PNP Bipolar Transistor

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数据手册

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BC858AS 数据手册

Dual PNP Small Signal Surface Mount Transistor

BC858AS BC858BS BC858CS

Features



Epitaxial die construction

Ultra-small surface mount package

Mechanical Data



Case: SOT-363

Molding compound: UL flammability classification rating 94V-0

Terminal s: Tin-plated; solderability per MIL-STD-202, Method 208

SOT-363

Ordering Information

Part Number

BC858AS

Package

Shipping Quantity

3000 pcs / Tape & Reel

Marking Code

SOT-363

BC858BS

BC858CS

Maximum Ratings (@ T_A= 25C unless otherwise specified)

Parameter

Collector-Base Voltage

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

-30

Unit

Collector-Emitter Voltage

Emitter-Base Voltage

-30

-5

Collector Current (Continuous)

Collector Current (Pulse)

-100

-200

I_CM

Thermal Characteristics

Parameter

Power Dissipation ( T_A= 25°C )

Symbol

P_D

Value

300

Unit

°C/W

°C

Thermal Resistance Junction-to-Air ^*1

Thermal Resistance Junction-to-Case ^*1

Thermal Resistance Junction-to-Lead ^*1

Operating Junction Temperature

Storage Temperature Range

R_θJA

R_θJC

R_θJL

T_J

320

210

240

-55 ~ +150

T_STG

°C

Note 1: The data tested by surface mounted on a 1 inch²FR-4 board with 2OZ copper

STM0805A: November 2023 [2.0]

www.gmesemi.com

12 3 4 5 6

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