生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.01 | 最大集电极电流 (IC): | 0.1 A |
集电极-发射极最大电压: | 30 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 125 | JESD-30 代码: | R-PDSO-G3 |
元件数量: | 1 | 端子数量: | 3 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | PNP |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 100 MHz |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
BC858AT/R | ETC |
获取价格 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-236AA | |
BC858AT116 | ROHM |
获取价格 |
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL | |
BC858AT117 | ROHM |
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Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL | |
BC858AT216 | ROHM |
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Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, MINIMOL | |
BC858ATA | DIODES |
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Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon | |
BC858A-TAPE-13 | NXP |
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TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BC858A-TAPE-7 | NXP |
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TRANSISTOR 100 mA, 30 V, PNP, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa | |
BC858ATC | DIODES |
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Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon | |
BC858AT-E6327 | INFINEON |
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Transistor | |
BC858AT-E6433 | INFINEON |
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Transistor |