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BC857S

更新时间: 2024-09-30 22:54:03
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体驱动器小信号双极晶体管
页数 文件大小 规格书
6页 162K
描述
PNP Silicon AF Transistor Array (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

BC857S 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:End Of Life包装说明:SMALL OUTLINE, R-PDSO-G6
针数:6Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.08
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):200
JESD-30 代码:R-PDSO-G6JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:6最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
标称过渡频率 (fT):250 MHzBase Number Matches:1

BC857S 数据手册

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BC 857S  
PNP Silicon AF Transistor Array  
For AF input stages and driver applications  
High current gain  
Low collector-emitter saturation voltage  
Two ( galvanic) internal isolated Transistors  
with high matching in one package  
Type  
Marking Ordering Code  
3Cs Q62702-C2373  
Pin Configuration  
1/4=E1/E2 2/5=B1/B2  
Package  
3/6=C2/C1  
BC 857S  
SOT-363  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Collector-emitter voltage  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
DC collector current  
Peak collector current  
V
V
V
V
45  
50  
V
CEO  
CBO  
CES  
EBO  
50  
5
I
I
100  
mA  
C
200  
CM  
250  
mW  
°C  
Total power dissipation, T = 115 °C  
P
S
tot  
j
Junction temperature  
Storage temperature  
T
T
150  
- 65...+150  
stg  
Thermal Resistance  
Junction ambient 1)  
R
R
275  
140  
K/W  
thJA  
Junction - soldering point  
thJS  
2
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm Cu  
Semiconductor Group  
1
May-12-1998  

BC857S 替代型号

型号 品牌 替代类型 描述 数据表
BC857SE6327 INFINEON

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TRANSISTOR SOT363