Datasheet > BC857S(KC857S)

BC857S(KC857S)

更新时间： 2024-10-02 18:09:35

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页数	文件大小	规格书
3页	142K
描述
Dual PNP Transistor

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中文翻译

获取价格

数据手册

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BC857S(KC857S) 数据手册

SMD Type

Transistors

PNP Transistors

BC857S (KC857S)

Ƶ Features

ƽ High current gain

ƽ Low collector-emitter saturation voltage

ƽ For AF input stages and driver applications

Ƶ Absolute Maximum Ratings Ta = 25ć

Parameter

Symbol

Rating

-50

Unit

Collector - Base Voltage

CBO

CEO

-45

Collector - Emitter Voltage

CES

EBO

-50

Emitter - Base Voltage

-5

Collector Current - Continuous

Collector Power Dissipation

-Derate above 25°C

-200

300

2.4

mW/ć

ć/W

Thermal Resistance.Junction- to-Ambient

Junction Temperature

RthJA

415

150

Storage Temperature Range

stg

-55 to 150

Ƶ Electrical Characteristics Ta = 25ć

Parameter

Symbol

Test Conditions

Min

-50

-45

-50

-5

Typ

Max

Unit

Collector- base breakdown voltage

CBO

CEO

Ic= -100 ȝAˈ I

Ic= -10 mAˈ I

Ic= -100 uAˈ VBE= 0

= -100Aˈ I = 0

E= 0

B= 0

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

CES

EBO

CB= -30 V , I

= 0

-15

-4

CBO

EBO

E= 0 , Ta = 150ć

EB= -5V , I

=-0.5mA

=-5mA

=- 2mA

-100

-0.3

-0.65

-1.2

-0.75

-0.82

630

=-10 mA, I

=-100mA, I

=-100 mA, I

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base-emitter on voltage

CE(sat)

BE(sat)

CE= -5V, I

-0.6

125

BE(on)

= -10mA

= -2mA

DC current gain

hFE

=- 0.2 mA, VCE =- 5V

Noise Figure

2.5

S = 2 kȍ, f = 1 kHz, BW = 200 Hz

Collector output capacitance

Transition frequency

CB= -10V, I

=0,f=1MHz

3.5

^CE= -5V, I = -10mA,f=100MHz

200

MHz

Ƶ Marking

Marking

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