BC857A

更新时间： 2024-02-09 08:41:06

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体驱动器晶体管光电二极管 PC
页数	文件大小	规格书
8页	275K
描述
PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage)

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数据手册

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BC857A 数据手册

BC 856 ... BC 860

Electrical Characteristics

at T = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

Collector-emitter breakdown voltage

V(BR)CE0

V(BR)CB0

V(BR)CES

V(BR)EB0

= 10 mA

BC 856

–

BC 857, BC 860

BC 858, BC 859

Collector-base breakdown voltage

= 10 µA

BC 856

–

BC 857, BC 860

BC 858, BC 859

Collector-emitter breakdown voltage

= 10 µA, VBE = 0

BC 856

–

BC 857, BC 860

BC 858, BC 859

Emitter-base breakdown voltage

= 1 µA

–

Collector cutoff current

ICB0

CB = 30 V

–

µA

CB = 30 V, T

= 150 ˚C

DC current gain

–

= 10 µA, VCE = 5 V

BC 856 A … BC 859 A

BC 856 B … BC 860 B

BC 857 C … BC 860 C

–

140

250

480

–

= 2 mA, VCE = 5 V

BC 856 A … BC 859 A

BC 856 B … BC 860 B

BC 857 C … BC 860 C

125

220

420

180

290

520

250

475

800

Collector-emitter saturation voltage¹⁾

VCEsat

VBEsat

VBE(on)

–

250

300

650

= 10 mA, I

= 100 mA, I

= 0.5 mA

= 5 mA

Base-emitter saturation voltage¹⁾

–

700

850

–

= 10 mA, I

= 100 mA, I

= 0.5 mA

= 5 mA

Base-emitter voltage

= 2 mA, VCE = 5 V

= 10 mA, VCE = 5 V

600

–

650

–

750

820

¹⁾Pulse test: t ≤ 300 µs, D = 2 %.

Semiconductor Group

1 234 5 6 7 8

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