BC846-BC850
NPN SILICON TRANSISTOR
ꢀ
ABSOLUTE MAXIMUM RATING (Ta=25℃, unless otherwise specified)
PARAMETER
BC846
SYMBOL
VCBO
VALUE
80
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
BC847 / BC850
BC848 / BC849
BC846
50
V
30
V
65
V
VCEO
BC847 / BC850
BC848 / BC849
BC846 / BC847
BC848 / BC849 /
BC850
45
V
30
V
6
V
VEBO
5
V
Collector Current (DC)
Collector Dissipation
Ic
100
310
mA
mW
mW
SOT-23
PD
SOT-323
200
Junction Temperature
Storage Temperature
TJ
+150
°
°
C
C
TSTG
-40 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ꢀ
ELECTRICAL CHARACTERISTICS (Ta=25
°
C, unless otherwise specified)
TEST CONDITIONS
VCB=30V, IE=0
PARAMETER
SYMBOL
ICBO
MIN TYP MAX UNIT
Collector Cut-Off Current
DC Current Gain
15
nA
hFE
VCE=5.0V, Ic=2.0mA
Ic=10mA,IB=0.5mA
Ic=100mA,IB=5.0mA
Ic=10mA,IB=0.5mA
Ic=100mA,IB=5.0mA
VCE=5.0V,Ic=2.0mA
VCE=5.0V,Ic=10mA
110
800
250
90
mV
mV
mV
mV
mV
mV
Collector-Emitter Saturation Voltage
Collector-Base Saturation Voltage
Base-Emitter On Voltage
VCE(SAT)
VBE(SAT)
VBE(ON)
fT
200 600
700
900
580 660 700
720
VCE=5.0V,Ic=10mA
Current Gain Bandwidth Product
300
MHz
f=100MHz
Output Capacitance
Input Capacitance
Cob
Cib
VCB=10V, IE=0, f=1.0MHz
VEB=0.5V, IC=0, f=1.0MHz
3.5
9
6
pF
pF
dB
dB
dB
dB
BC846/BC847/BC848
V
CE=5V, Ic=200
µ
A,
2
10
4
f=1KHz, RG=2K
Ω
BC849/BC850
Noise Figure
1.2
1.4
1.4
NF
V
CE=5V, IC=200
µ
A,
BC849
4
RG=2KΩ, f=30~15000Hz
BC850
3
ꢀ
CLASSIFICATION OF hFE
RANK
A
B
C
RANGE
110-220
200-450
420-800
UNISONIC TECHNOLOGIES CO., LTD
2 of 4
QW-R206-027,C
www.unisonic.com.tw