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BC847CF,115 PDF预览

BC847CF,115

更新时间: 2024-02-19 00:25:45
品牌 Logo 应用领域
恩智浦 - NXP 开关光电二极管晶体管
页数 文件大小 规格书
12页 68K
描述
TRANSISTOR 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SMD, SC-89, 3 PIN, BIP General Purpose Small Signal

BC847CF,115 技术参数

是否无铅: 不含铅生命周期:Obsolete
零件包装代码:SC-89包装说明:SMALL OUTLINE, R-PDSO-F3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:45 V
配置:SINGLE最小直流电流增益 (hFE):420
JESD-30 代码:R-PDSO-F3JESD-609代码:e3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHz

BC847CF,115 数据手册

 浏览型号BC847CF,115的Datasheet PDF文件第3页浏览型号BC847CF,115的Datasheet PDF文件第4页浏览型号BC847CF,115的Datasheet PDF文件第5页浏览型号BC847CF,115的Datasheet PDF文件第7页浏览型号BC847CF,115的Datasheet PDF文件第8页浏览型号BC847CF,115的Datasheet PDF文件第9页 
Philips Semiconductors  
Product specification  
NPN general purpose transistors  
BC847F series  
GRAPHICAL INFORMATION BC847CF  
MGT731  
MGT732  
1200  
1200  
handbook, halfpage  
handbook, halfpage  
V
BE  
(mV)  
h
FE  
1000  
(1)  
1000  
(1)  
(2)  
800  
800  
600  
400  
200  
0
(2)  
600  
(3)  
400  
(3)  
200  
0
2  
1  
2
3
1  
2
3
10  
10  
1
10  
10  
10  
10  
1
10  
10  
10  
I
(mA)  
I
(mA)  
C
C
VCE = 5 V.  
(1) Tamb = 55 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 150 °C.  
VCE = 5 V.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
Fig.11 Base-emitter voltage as a function of  
collector current; typical values.  
Fig.10 DC current gain; typical values.  
MGT733  
MGT734  
4
10  
1200  
handbook, halfpage  
handbook, halfpage  
V
BEsat  
(mV)  
V
CEsat  
1000  
(mV)  
(1)  
3
10  
800  
(2)  
600  
(3)  
2
400  
10  
(1)  
200  
0
(3) (2)  
10  
10  
1  
2
3
1  
2
3
1
10  
10  
10  
10  
1
10  
10  
10  
I
(mA)  
I
(mA)  
C
C
IC/IB = 20.  
IC/IB 10.  
(1) Tamb = 150 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 55 °C.  
(1) Tamb = 55 °C.  
(2) Tamb = 25 °C.  
(3) Tamb = 150 °C.  
Fig.12 Collector-emitter saturation voltage as a  
function of collector current; typical values.  
Fig.13 Base-emitter saturation voltage as a  
function of collector current; typical values.  
2000 Dec 04  
6

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