Datasheet > BC818-40L99Z

BC818-40L99Z

更新时间： 2024-01-07 12:57:38

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关光电二极管晶体管
页数	文件大小	规格书
3页	46K
描述
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon

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技术参数
数据手册

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BC818-40L99Z 技术参数

生命周期：	Transferred	包装说明：	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.83	最大集电极电流 (IC)：	1.5 A
集电极-发射极最大电压：	25 V	配置：	SINGLE
最小直流电流增益 (hFE)：	250	JEDEC-95代码：	TO-236AB
JESD-30 代码：	R-PDSO-G3	元件数量：	1
端子数量：	3	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON

BC818-40L99Z 数据手册

BC818-25

BC818-40

SOT-23

Mark: 6F. / 6G.

NPN General Purpose Amplifier

This device is designed for general purpose medium power

amplifiers and switches requiring collector currents to 1.2 A.

Sourced from Process 38. See BC817 for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CES

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

1.5

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

*BC818-25 / BC818-40

P_D

Total Device Dissipation

Derate above 25 C

350

2.8

mW/ C

Thermal Resistance, Junction to Ambient

357

R_θ

C/W

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

1997 Fairchild Semiconductor Corporation

12 3

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