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BC81840MTF PDF预览

BC81840MTF

更新时间: 2024-02-20 05:18:37
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
5页 166K
描述
NPN Epitaxial Silicon Transistor

BC81840MTF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.53
最大集电极电流 (IC):0.8 A集电极-发射极最大电压:25 V
配置:SINGLE最小直流电流增益 (hFE):170
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.33 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
Base Number Matches:1

BC81840MTF 数据手册

 浏览型号BC81840MTF的Datasheet PDF文件第2页浏览型号BC81840MTF的Datasheet PDF文件第3页浏览型号BC81840MTF的Datasheet PDF文件第4页浏览型号BC81840MTF的Datasheet PDF文件第5页 
November 2006  
BC817/BC818  
NPN Epitaxial Silicon Transistor  
tm  
Features  
Switching and Amplifier Applications  
Suitable for AF-Driver stages and low power output stages  
Complement to BC807/ BC808  
3
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
: BC817  
: BC818  
50  
30  
V
V
VCEO  
Collector-Emitter Voltage  
: BC817  
: BC818  
45  
25  
V
V
VEBO  
IC  
Emitter-Base Voltage  
Collector Current (DC)  
5
800  
V
mA  
mW  
°C  
PC  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
310  
TJ  
150  
TSTG  
-65 ~ 150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics* Ta=25°C unless otherwise noted  
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BVCEO  
Collector-Emitter Breakdown Voltage  
IC=10mA, IB=0  
: BC817  
: BC818  
45  
25  
V
V
BVCES  
Collector-Emitter Breakdown Voltage  
IC=0.1mA, VBE=0  
: BC817  
: BC818  
50  
30  
V
V
BVEBO  
ICES  
Emitter-Base Breakdown Voltage  
Collector Cut-off Current  
Emitter Cut-off Current  
DC Current Gain  
IE=0.1mA, IC=0  
VCE=25V, VBE=0  
VEB=4V, IC=0  
5
V
100  
100  
630  
nA  
nA  
IEBO  
hFE1  
hFE2  
VCE=1V, IC=100mA  
VCE=1V, IC=300mA  
100  
60  
VCE (sat)  
VBE (on)  
fT  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
IC=500mA, IB=50mA  
VCE=1V, IC=300mA  
0.7  
1.2  
V
V
Current Gain Bandwidth Product  
VCE=5V, IC=10mA  
f=50MHz  
100  
MHz  
Cob  
Output Capacitance  
VCB=10V, f=1MHz  
12  
pF  
* Pulse Test: Pulse Width300µs, Duty Cycle2%  
©2006 Fairchild Semiconductor Corporation  
BC817/BC818 Rev. B  
1
www.fairchildsemi.com  

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