Datasheet > BC817A

BC817A

更新时间： 2024-11-25 08:49:43

品牌	Logo	应用领域
KEC		晶体晶体管局域网
页数	文件大小	规格书
2页	39K
描述
EPITAXIAL PLANAR NPN TRANSISTOR

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中文翻译

获取价格

数据手册

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BC817A 数据手册

SEMICONDUCTOR

BC817A

EPITAXIAL PLANAR NPN TRANSISTOR

TECHNICAL DATA

GENERAL PURPOSE APPLICATION.

SWITCHING APPLICATION.

FEATURES

DIM MILLIMETERS

Complementary to BC807A.

2.93 0.20

1.30+0.20/-0.15

1.30 MAX

0.45+0.15/-0.05

2.40+0.30/-0.20

1.90

0.95

MAXIMUM RATING (Ta=25

CHARACTERISTIC

)

0.13+0.10/-0.05

0.00 ~ 0.10

0.55

SYMBOL RATING

UNIT

0.20 MIN

1.00+0.20/-0.10

V_CBO

V_CEO

V_EBO

I_C

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

500

1. EMITTER

2. BASE

I_E

Emitter Current

-500

350

3. COLLECTOR

P_C*

T_j

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

150

SOT-23

T_stg

-55 150

* : Package Mounted On 99.9% Alumina 10

0.6mm.

ELECTRICAL CHARACTERISTICS (Ta=25

)

CHARACTERISTIC

Collector Cut-off Current

SYMBOL

I_CBO

TEST CONDITION

MIN.

TYP.

MAX.

0.1

630

UNIT

V_CB=20V, I_E=0

I_EBO

V_EB=5V, I_C=0

Emitter Cut-off Current

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE

V_CE=1V, I_C=100mA

V_CE=1V, I_C=500mA

I_C=500mA, I_B=50mA

V_CE=1V, I_C=500mA

V_CE=5V, I_C=10mA, f=100MHz

V_CB=10V, I_E=0, f=1MHz

100

DC Current Gain (Note)

Collector-Emitter Saturation Voltage

Base-Emitter Voltage

0.7

1.2

f_T

Transition Frequency

100

MHz

C_ob

Collector Output Capacitance

Note : h_FE(1) Classification 16:100 250 , 25:160 400 , 40:250 630

Marking

MARK SPEC

Lot No.

TYPE

BC817A-16

BC817A-25

BC817A-40

Type Name

MARK

2009. 2. 19

Revision No : 2

1/2

中文翻译

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