Datasheet > BC807-40LR

BC807-40LR

更新时间： 2022-09-29 11:48:25

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描述
BC807-40L/SOT23/TO-236AB

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BC807-40LR 数据手册

Nexperia

BC807L; BC807LW

45 V, 500 mA PNP general-purpose transistors

Symbol

T_j

Parameter

Conditions

Min

Max

150

Unit

°C

junction temperature

ambient temperature

storage temperature

T_amb

T_stg

-55

-65

°C

[1] Device mounted on an FR4 Printed-Circuit-Board (PCB); single-sided copper; tin-plated and standard footprint.

6 Thermal characteristics

Table 7.ꢀThermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

[1]

R_th(j-a)

thermal resistance from junction in free air

to ambient

500

K/W

SOT23

thermal resistance from junction

to ambient

625

K/W

SOT323

[1] Device mounted on an FR4 PCB; single-sided copper; tin-plated and standard footprint.

7 Characteristics

Table 8.ꢀCharacteristics

T_amb= 25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

V_(BR)CBO

collector-base

breakdown voltage

I_C= -100 µA; I_E= 0 A

-50

-45

-7

V_(BR)CEO

V_(BR)EBO

I_CBO

collector-emitter

breakdown voltage

I_C= -10 mA; I_B= 0 A

I_E= -100 µA; I_C= 0 A

emitter-base

breakdown voltage

collector-base

cut-off current

V_CB= -40 V; I_E= 0 A

-100

-5

μA

V_CB= -40 V; I_E= 0 A; T_j= 150 °C

V_EB= -5 V; I_C= 0 A

I_EBO

emitter-base

-100

cut-off current

h_FE

DC current gain

[1]

BC807-16L,

BC807-16LW

V_CE= -1 V; I_C= -100 mA

100

160

250

400

600

BC807-25L,

BC807-25LW

BC807-40L,

BC807-40LW

[1]

DC current gain

V_CE= -1 V; I_C= -500 mA

I_C= -500 mA; I_B= -50 mA

V_CEsat

collector-emitter

-700

saturation voltage

[1]

V_BE

base-emitter voltage

V_CE= -1 V; I_C= -500 mA

-1.2

BC807L_BC807LW

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 5 January 2018

4 / 16

1 2 345 6 7...16

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