SEMICONDUCTOR TECHNICAL DATA
PNP Silicon
COLLECTOR
1
2
BASE
3
EMITTER
MAXIMUM RATINGS
1
2
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol BC556 BC557 BC558
Unit
Vdc
3
V
CEO
V
CBO
V
EBO
–65
–80
–45
–50
–30
–30
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Vdc
–5.0
–100
Vdc
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = –2.0 mAdc, I = 0)
V
V
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
BC556
BC557
BC558
–65
–45
–30
—
—
—
—
—
—
C
B
Collector–Base Breakdown Voltage
(I = –100 µAdc)
C
BC556
BC557
BC558
–80
–50
–30
—
—
—
—
—
—
Emitter–Base Breakdown Voltage
(I = –100 Adc, I = 0)
BC556
BC557
BC558
–5.0
–5.0
–5.0
—
—
—
—
—
—
E
C
Collector–Emitter Leakage Current
I
CES
(V
CES
(V
CES
= –40 V)
= –20 V)
BC556
BC557
BC558
BC556
BC557
BC558
—
—
—
—
—
—
–2.0
–2.0
–2.0
—
—
—
–100
–100
–100
–4.0
–4.0
–4.0
nA
(V
CES
= –20 V, T = 125°C)
µA
A
Motorola Small–Signal Transistors, FETs and Diodes Device Data
2–123