Datasheet > BC556RLRA

BC556RLRA

更新时间： 2024-11-29 03:39:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
25页	310K
描述
100mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN

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BC556RLRA 数据手册

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol BC556 BC557 BC558

Unit

Vdc

CEO

CBO

EBO

–65

–80

–45

–50

–30

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

Vdc

–5.0

–100

Vdc

Collector Current — Continuous

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watt

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = –2.0 mAdc, I = 0)

(BR)CEO

(BR)CBO

(BR)EBO

BC556

BC557

BC558

–65

–45

–30

—

Collector–Base Breakdown Voltage

(I = –100 µAdc)

BC556

BC557

BC558

–80

–50

–30

—

Emitter–Base Breakdown Voltage

(I = –100 Adc, I = 0)

BC556

BC557

BC558

–5.0

—

Collector–Emitter Leakage Current

CES

= –40 V)

= –20 V)

BC556

BC557

BC558

BC556

BC557

BC558

—

–2.0

—

–100

–4.0

CES

= –20 V, T = 125°C)

µA

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2–123

12 3 4 5 6 7...25

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