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BC550CRLRA PDF预览

BC550CRLRA

更新时间: 2024-02-25 07:45:38
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管放大器
页数 文件大小 规格书
4页 113K
描述
100mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

BC550CRLRA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:IN-LINE, R-PSIP-T3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.11
其他特性:LOW NOISE最大集电极电流 (IC):0.2 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):200JESD-30 代码:R-PSIP-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified参考标准:CECC
表面贴装:NO端子面层:MATTE TIN
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:40晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
VCEsat-Max:0.25 VBase Number Matches:1

BC550CRLRA 数据手册

 浏览型号BC550CRLRA的Datasheet PDF文件第2页浏览型号BC550CRLRA的Datasheet PDF文件第3页浏览型号BC550CRLRA的Datasheet PDF文件第4页 
Order this document  
by BC549B/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
1
2
BASE  
3
EMITTER  
1
MAXIMUM RATINGS  
2
3
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
BC549 BC550  
Unit  
Vdc  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
V
CEO  
V
CBO  
V
EBO  
30  
30  
45  
50  
Vdc  
5.0  
Vdc  
Collector Current — Continuous  
I
C
100  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
(I = 10 mAdc, I = 0)  
V
Vdc  
Vdc  
Vdc  
(BR)CEO  
BC549B,C  
BC550B,C  
30  
45  
C
B
CollectorBase Breakdown Voltage  
(I = 10 µAdc, I = 0)  
V
(BR)CBO  
BC549B,C  
BC550B,C  
30  
50  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
5.0  
(BR)EBO  
E
C
Collector Cutoff Current  
I
CBO  
(V  
CB  
(V  
CB  
= 30 V, I = 0)  
15  
5.0  
nAdc  
µAdc  
E
= 30 V, I = 0, T = +125°C)  
E
A
Emitter Cutoff Current  
(V = 4.0 Vdc, I = 0)  
I
15  
nAdc  
EBO  
EB  
C
Motorola, Inc. 1996  

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