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BC547

更新时间: 2024-11-09 08:49:27
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TGS 晶体晶体管
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描述
TO-92 Plastic-Encapsulate Transistors (NPN)

BC547 数据手册

  
TIGER ELECTRONIC CO.,LTD  
TO-92 Plastic-Encapsulate Transistors  
BC546/BC547/BC548 TRANSISTOR (NPN)  
TO-92  
FEATURES  
z
High Voltage  
Complement to BC556,BC557,BC558  
1. COLLECTOR  
2. BASE  
z
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Parameter  
Symbol  
Value  
Unit  
3. EMITTER  
Collector-Base Voltage  
BC546  
BC547  
BC548  
80  
50  
30  
VCBO  
V
Collector-Emitter Voltage  
Emitter-Base Voltage  
BC546  
BC547  
BC548  
65  
45  
30  
V
VCEO  
6
100  
VEBO  
IC  
V
mA  
mW  
Collector Current -Continuous  
Total Device Dissipation  
Junction Temperature  
625  
PD  
150  
TJ  
Storage Temperature  
-55-150  
Tstg  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
Test  
conditions  
Min  
Max  
Unit  
Collector-base breakdown voltage  
BC546  
BC547  
BC548  
80  
50  
30  
VCBO  
IC= 100μA , IE=0  
V
Collector-emitter breakdown voltage  
BC546  
BC547  
BC548  
65  
45  
30  
VCEO  
VEBO  
ICBO  
IC= 1mA , IB=0  
V
V
Emitter-base breakdown voltage  
Collector cut-off current  
IE= 10μA, IC=0  
6
BC546  
BC547  
BC548  
BC546  
BC547  
BC548  
BC546  
BC547  
BC548  
BC546  
BC547  
BC548  
VCB= 70V, IE=0  
0.1  
V
V
CB= 50 V, IE=0  
CB= 30V, IE=0  
μA  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
VCE= 60 V, IB=0  
ICEO  
V
V
CE= 45 V, IB=0  
CE= 30 V, IB=0  
0.1  
0.1  
μA  
μA  
IEBO  
VEB= 5V, IC=0  
110  
110  
110  
110  
200  
420  
800  
800  
800  
220  
450  
800  
hFE  
VCE=5V, IC= 2mA  
BC546A/BC547A/BC548A  
BC546B/BC547B/BC548B  
BC546C/BC547C/BC548C  
Collector-emitter saturation voltage  
VCE(sat)  
VBE(sat)  
IC=100mA, IB= 5mA  
IC= 100mA, IB=5mA  
0.3  
1.1  
V
V
Base-emitter saturation voltage  
Transition frequency  
VCE= 5V, IC= 10mA  
fT  
150  
MHz  
f = 100MHz  
A,May,2011  

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