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BC489A

更新时间: 2024-11-12 22:39:27
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
6页 238K
描述
High Current Transistors(NPN Silicon)

BC489A 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:TO-92
包装说明:CASE 29-04, TO-226AA, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.21.00.75风险等级:5.36
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:1815321Samacsys Pin Count:3
Samacsys Part Category:Transistor BJT NPNSamacsys Package Category:Other
Samacsys Footprint Name:TO?92 (TO?226AA) CASE 029?11 ISSUE ALSamacsys Released Date:2019-05-20 13:57:00
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:80 V配置:SINGLE
最小直流电流增益 (hFE):100JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3JESD-609代码:e0
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):240极性/信道类型:NPN
最大功率耗散 (Abs):0.625 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

BC489A 数据手册

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Order this document  
by BC489/D  
SEMICONDUCTOR TECHNICAL DATA  
NPN Silicon  
COLLECTOR  
1
2
BASE  
3
EMITTER  
MAXIMUM RATINGS  
1
2
Rating  
CollectorEmitter Voltage  
CollectorBase Voltage  
EmitterBase Voltage  
Symbol  
Value  
Unit  
Vdc  
Vdc  
Vdc  
Adc  
3
V
CEO  
V
CBO  
V
EBO  
80  
80  
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
5.0  
0.5  
Collector Current — Continuous  
I
C
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Operating and Storage Junction  
Temperature Range  
T , T  
55 to +150  
°C  
J
stg  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
R
JA  
JC  
83.3  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
V
V
80  
80  
5.0  
Vdc  
Vdc  
(BR)CEO  
(I = 10 mAdc, I = 0)  
C
B
CollectorBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
(BR)CBO  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
(V = 60 Vdc, I = 0)  
I
100  
nAdc  
CBO  
CB  
E
ON CHARACTERISTICS*  
DC Current Gain  
h
FE  
(I = 10 mAdc, V  
= 2.0 Vdc)  
= 2.0 Vdc)  
40  
60  
100  
160  
15  
160  
260  
C
CE  
(I = 100 mAdc, V  
CE  
BC489  
BC489A  
BC489B  
400  
250  
400  
C
(I = 1.0 Adc, V  
C CE  
= 5.0 Vdc)*  
1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2%.  
Motorola, Inc. 1996  

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